2014
DOI: 10.1134/s0020168514090052
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Spectral ellipsometry study of thin films grown on GaAs by chemically stimulated thermal oxidation

Abstract: We demonstrate that spectral ellipsometry can be used to characterize thin films grown on GaAs by chemically stimulated thermal oxidation and to determine their thickness in the nanometer range. Our results show that, in the long wavelength region, spectra of the films studied are well described by the Cauchy model. A two layer model is used to interpret the spectrum of a heavily doped sample.

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