2011
DOI: 10.1109/jphot.2011.2172403
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Spectral Dynamical Behavior in Passively Mode-Locked Semiconductor Lasers

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Cited by 36 publications
(29 citation statements)
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“…Operation at a different temperature can lead to a significant difference in performance such us different central wavelength [21]. The PML described here operates around 1565 nm which is a 20 nm longer wavelength than the operating wavelength of the previous PML.…”
Section: Lettermentioning
confidence: 97%
“…Operation at a different temperature can lead to a significant difference in performance such us different central wavelength [21]. The PML described here operates around 1565 nm which is a 20 nm longer wavelength than the operating wavelength of the previous PML.…”
Section: Lettermentioning
confidence: 97%
“…The material used was a MQW AlGaInAs/InP wafer structure, and a detailed description of the epitaxial layers can be found in [10]. This particular material was chosen because its ML behavior is well understood and documented, thanks to extensive characterization carried out previously [6]. Besides the insertion of a preliminary QWI step, the fabrication followed a standardized laser fabrication process, whose details can be found elsewhere [11].…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…The analysis in [5] suggested that such limitations are caused by the wavelength-dependent properties of the absorbing section. Starting from a situation of stable and complete ML (as defined in [6]), an increase of the gain section current directly translates into an increase of the SA photocurrent, with the associated Joule heating shifting the SA band edge away from that of the gain section, and the optimal conditions for ML ceasing.…”
Section: Introductionmentioning
confidence: 99%
“…A lumped element time domain model has also been developed that eliminates the spatial dependence in favour of a delaydifferential equation for the field variable [13]. These models are efficient tools for understanding the physical origins of complex spectral and pulse shaping mechanisms in mode-locked semiconductor lasers [14][15][16].…”
Section: Introductionmentioning
confidence: 99%