Spectral dependence of photoresponse and electronic structure of monocrystal of CuInTe2

Joshi, N.V.; Aguilar, H.

doi:10.1016/0022-3697(82)90026-9

Cited by 15 publications

(4 citation statements)

References 7 publications

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“…From the plot of α 2 d versus hν (figure 4) we have determined the energy gap E g ≈ 0.94 eV. This is in agreement with literature data [8,[10][11][12]. We have determined also A * 2 (the slope of α 2 d versus hν), i.e.…”

Section: Optical Measurementssupporting

confidence: 89%

“…It should be noted that no reflection measurements are needed in this method. It is known that the fundamental absorption for CuInTe 2 is due to allowed direct transitions [8][9][10][11]. The absorption coefficient α d for direct transitions is defined by the following relation [21,22]…”

Section: Optical Measurementsmentioning

confidence: 99%

“…Certain compounds such as CuInX 2 (X = Te, Se, S) and CuAlTe 2 can be made both p-and n-type conductive [7][8][9]. CuInTe 2 has a high absorption coefficient (α ≈ 10 4 -10 5 cm −1 ) and an energy gap in the range 0.93-1.06 eV [8,[10][11][12]. CuInTe 2 can thus be used as an absorber layer in heterojunction devices with other I-III-VI 2 or II-IV 2 semiconductors [13].…”

Section: Introductionmentioning

confidence: 99%

“…Figure 3(a) shows the transmission of a substrate, figure 3(b) a substrate with a CuInTe 2 thin film on it and figure 3(c) a CuInTe 2 film only.It is known that the fundamental absorption for CuInTe 2 is due to allowed direct transitions[8][9][10][11]. The absorption coefficient α d for direct transitions is defined by the following relation[21,22] …”

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confidence: 99%

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Characterization of thin films prepared by flash evaporation

Boustani¹,

Assali²,

Bekkay³

et al. 1997

Semicond. Sci. Technol.

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Thin films of CuInTe 2 were grown by flash evaporation. The influence of the substrate temperature T s during film deposition on the properties of the thin films was examined. CuInTe 2 films were structurally characterized by the grazing incidence x-ray diffraction (GIXD) technique. Investigation by this technique demonstrates that the surface of thin films of CuInTe 2 prepared by flash evaporation at T s ≥ 100 • C exhibits the chalcopyrite structure with additional binary compounds in the surface. However, in the volume the films exhibit the chalcopyrite structure only; no foreign phases were observed. X-ray reflectometry was utilized to evaluate the critical reflection angle β c of CuInTe 2 (β CuInTe2 c ≈ 0.32 •) which permitted us to calculate the density of the films to be ρ ≈ 6 g cm −3. The evaporated films were p type and the films deposited at T s = 100 • C had a resistivity in the range 0.3-2 cm. From optical measurements we have determined the optical energy gap E g ≈ 0.94 eV and the effective reduced mass m * r ≈ 0.07m e .

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Section: Optical Measurementssupporting

confidence: 89%

Section: Optical Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Characterization of thin films prepared by flash evaporation

Boustani¹,

Assali²,

Bekkay³

et al. 1997

Semicond. Sci. Technol.

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Temperature dependence of the photoconductivity in CuInTe₂ single crystals

Tomlinson

Neumann

Slifkin

et al. 1988

Cryst. Res. Technol.

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The temperature dependence of the steady-state photoconductivity of as-grown and annealed CuInTe, single crystals was measured in the range from 77 t o 300 K . A model with two electron trapping centres is proposed t o explain the experimental data.Die Temperaturabhiingigkeit der stationiiren Photoleitung von ungetemperten und getemperten CuInTe,-Einkristallen wurde im Bereich von 77 bis 300 K gemessen. Fur die Erkliirung der experimentellen Daten wird ein Modell mit zwei Einfangzentren fur Elektronen vorgeschlagen.

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