Spectral behavior of the emission around 3.31eV (A-line) from ZnO nanocrystals

Kurbanov, S. S.; Kang, Tae Won

doi:10.1016/j.jlumin.2009.11.030

Cited by 23 publications

(11 citation statements)

References 22 publications

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“…1c). This particular peak has been found by several authors [6,10,27,30] in ZnO micro or nano crystallites, particularly in powder samples [31]. Our observation is consistent with the report [11] that 3.313 eV PL emission is quenched for annealing at 800 o C. Some acceptor defects residing at stacking faults are thought to be the origin of this peak [10,27].…”

Section: Resultssupporting

confidence: 92%

Low temperature photoluminescence from disordered granular ZnO

Pal

Sarkar²,

Kumar

et al. 2016

Journal of Luminescence

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Section: Resultssupporting

confidence: 92%

Low temperature photoluminescence from disordered granular ZnO

Pal

Sarkar²,

Kumar

et al. 2016

Journal of Luminescence

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“…The emission was seemed to be similar to emission discussed as A-line [11], which was concluded as surface defectsrelated emission. The thermal activation energy of the broad-line obtained by Arrhenius-relationship on the intensity was about 60 meV, which indicated the emission was not due to electron recombination in deeplevel but originated from recombination of exciton bound to defects.…”

Section: Pl Spectrum Of Zno Layer On Optimizedsupporting

confidence: 56%

“…Further, the emission was not observed from the ZnO layer on c-sapphire as shown in Figure 2, which indicated the emission was not derived from the grain boundaries. The origin of defect bounding exction is not identified yet, but may be related to surface structural defects [11,12].…”

Section: Pl Spectrum Of Zno Layer On Optimizedmentioning

confidence: 99%

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Yamauchi¹,

Imai²

2013

CSTA

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Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340˚C using Ti 2 O 3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

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“…The high-energy side shoulder peak at 3.363 eV is commonly assigned as the hydrogen donor-bound exciton (I 4 line) [52]. The dominating peaks at 3.243 and 3.306 eV are mainly proposed to be donor-acceptor-pair transitions [53,54], although other assignments have also been provided [55][56][57]. The inset shows the room-temperature PL spectra for the same sample.…”

Section: Structural Propertiesmentioning

confidence: 99%