Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Zheng, Youdou; Zuo, Zheng-Wei; Zhou, Huimei; Beyermann, W. P.; Liu, J.L.

doi:10.1016/j.jcrysgro.2010.11.059

Cited by 29 publications

(16 citation statements)

References 77 publications

(57 reference statements)

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“…ZnO based diluted magnetic semiconductor (DMS) is one of the potential spintronic materials, having attracted a great deal of attention in recent years [1][2][3]. In 2000, Dietl et al [4] predicted that Mn doped p-type ZnO with a hole concentration of 410 20 cm À 3 could exhibit ferromagnetism above room temperature.…”

Section: Introductionmentioning

confidence: 99%

Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films

Zhuo¹,

Liu²,

Xiong³

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films

Zhuo¹,

Liu²,

Xiong³

et al. 2011

Journal of Crystal Growth

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“…[15] According to the XPS survey spectrum result shown in Fig. 2(a), the ratio of Mg, Zn, and O can be calculated using the method reported by Yang et al [16] to be 0.84:0.16:1.64, meaning that the level of oxygen vacancy (δ) is 0.36 and the film composition is Mg 0.84 Zn 0.16 O 2−δ . The formation of Mg 0.84 Zn 0.16 O 2−δ is further evidenced by the triple-peak structure of the O 1s emission in the high-resolution scan of the O 1s spectrum as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Unipolar resistive switching in Au/Cr/Mg0.84Zn0.16O2−δ /p+-Si

Ren

Olmedo

et al. 2012

Appl. Phys. A

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Unipolar resistive switching memory cells were fabricated using a Mg 0.84 Zn 0.16 O 2−δ thin film, sandwiched between p + -Si (100) substrate and Cr/Au top electrodes. Electrical measurements showed a large memory window and memory window margin of 10 7 and 10 4 , respectively. Furthermore, a wide switching voltage distribution gap of 3.6 V between the switching-ON and -OFF processes was obtained for different sweeping cycles. Gas bubbles at four different stages were observed on the top electrodes after electrical stimulus, indicating that conducting filaments consisting of oxygen vacancies are responsible for the resistive switching characteristics. Conductive atomic force microscopy results show that the highly conductive areas are along the edge of the gas bubble or the edge of the device. This phenomenon suggests the potential of scaling down the device area to lower than 32 nm.

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“…38,39 The reduction in magnetization may suggest that the primary magnetic coupling mechanism between Mn ions in the Mn-doped ZnO films changes gradually from carrier-mediated exchange coupling to coexistence of both carrier mediation and direct exchange when more Mn is incorporated. 40 The saturation magnetization of the Mn-doped film increases as the annealing temperature is increased. Annealing the film will increase the number of oxygen vacancies and decrease the distance between adjacent Mn 2+ ions, such that the magnetization of the Mn-doped ZnO film can be enhanced.…”

Section: Magnetic Propertiesmentioning

confidence: 99%

The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition

Fang

Luo

Hsu

et al. 2011

Journal of Elec Materi

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Manganese-doped zinc oxide (Mn-doped ZnO) thin films were prepared using chemical bath deposition (CBD), and the impacts of the manganese dopant concentration on the structure, electrical resistivity, optical transmission, and magnetic properties were investigated using x-ray diffractometry, Hall-effect measurements, ultraviolet-visible-near-infrared (UV-Vis-IR) spectrophotometry, and vibrating sample magnetometry (VSM), respectively. The concentration of the manganese dopant in the ZnO thin film critically impacted the resulting properties, and the 4.0 at.% Mn-doped ZnO film had a resistivity of 5.8 9 10 À2 Xcm, transmittance of 75.6% in the visible light range, and bandgap of 3.30 eV when the film was annealed at 600°C in an Ar + H 2 atmosphere. Annealing the film could enhance its magnetic properties such that the film had a saturation magnetization of 21.0 emu/cm 3 and a coercivity of 45.7 Oe after annealing at 600°C. Because of these electrical, optical, and magnetic properties, Mn-doped thin films are promising for use in spintronic devices.

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Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Cited by 29 publications

References 77 publications

Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films

Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films

Unipolar resistive switching in Au/Cr/Mg0.84Zn0.16O2−δ /p+-Si

The Transparent Conductive Properties of Manganese-Doped Zinc Oxide Films Deposited by Chemical Bath Deposition

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