Spectral and luminescence properties of gadolinium gallium garnet epitaxial films doped with terbium

Vasil’eva, N. V.; Randoshkin, V. V.; Kolobanov, V. N.; Kryukova, E. B.; Mikhaĭlin, V. V.; Petrovnin, N. N.; Плотниченко, В. Г.; Pyrkov, Yu. N.; Spasskii, D. A.; Sysoev, N. N.

doi:10.1134/s1063783407030158

Cited by 3 publications

(2 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The liquid‐phase epitaxy (LPE) of single crystalline layers with the garnet structure is one of the most widely used technologies for obtaining functional materials for magnetoelectronics, integrated optics, luminescent and scintillation applications, etc. [ 1–5 ]…”

Section: Introductionmentioning

confidence: 99%

“…The liquid-phase epitaxy (LPE) of single crystalline layers with the garnet structure is one of the most widely used technologies for obtaining functional materials for magnetoelectronics, integrated optics, luminescent and scintillation applications, etc. [1][2][3][4][5] The presence of defects in epitaxial layers determines their application capability. In particular, structural defects lead to unwanted dissipation of the energy of electromagnetic waves within layers based on Y 3 Fe 5 O 12 (YIG) grown on a Gd 3 Ga 5 O 12 (GGG) substrate in magnetoelectronics.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Syvorotka

Sugak

Yakhnevych

et al. 2022

Crystal Research and Technology

View full text Add to dashboard Cite

The changes in the optical, structural, mechanical properties, and chemical composition of Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 (YIG/GGG) single crystal structures grown by liquid phase epitaxy, particularly at the interface between the film (Y 3 Fe 5 O 12 ) and the substrate (Gd 3 Ga 5 O 12 ), are studied. Different complementary techniques, including optical microscopy, local spectrophotometry, electron probe microanalysis, micro-Raman spectroscopy, and nanohardness analysis are used. The main finding of the study is an experimental approach, in which the probe of the measuring device (light beam, electron beam, nanoindenter) is directed to the surface of the studied sample in a direction perpendicular to the direction of structure growth, and the surface is scanned along this direction. It allows to obtain the profiles of changes in refractive properties, nanohardness, optical absorption, chemical composition, and intensity of phonon spectrum bands at the transition from the GGG to YIG. It is established that the lengths of the scanning intervals, at which the changes of various properties of a specimen occur, differ significantly. The obtained results are affected by the size of the probes and by the sensitivities of both the particular measuring method and the particular physical property of the material to changes in the chemical composition and crystalline structure of the sample.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Syvorotka

Sugak

Yakhnevych

et al. 2022

Crystal Research and Technology

View full text Add to dashboard Cite

show abstract

Luminescence properties of Eu3+ doped gadolinium aluminum garnet phosphors

Kaur

Rani

Lal

2020

Optik

View full text Add to dashboard Cite

Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Krasnikov

Luchechko

Mihóková

et al. 2017

Journal of Luminescence

View full text Add to dashboard Cite

Spectral and luminescence properties of gadolinium gallium garnet epitaxial films doped with terbium

Cited by 3 publications

References 13 publications

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Luminescence properties of Eu3+ doped gadolinium aluminum garnet phosphors

Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Contact Info

Product

Resources

About

Spectral and luminescence properties of gadolinium gallium garnet epitaxial films doped with terbium

Cited by 3 publications

References 13 publications

Investigation of the Interface of Y3Fe5O12/Gd3Ga5O12 Structure Obtained by the Liquid Phase Epitaxy

Investigation of the Interface of Y3Fe5O12/Gd3Ga5O12 Structure Obtained by the Liquid Phase Epitaxy

Luminescence properties of Eu3+ doped gadolinium aluminum garnet phosphors

Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Contact Info

Product

Resources

About

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy

Investigation of the Interface of Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ Structure Obtained by the Liquid Phase Epitaxy