Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Krasnikov, А.; Luchechko, A.; Mihóková, E.; Nikl, M.; Syvorotka, I.I.; Zazubovich, S.; Zhydachevskii, Ya.

doi:10.1016/j.jlumin.2017.05.050

Cited by 24 publications

(22 citation statements)

References 32 publications

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“…In case the same dependence is valid for the Bi 3+ -doped gallates, the luminescence spectra of Y 3 Ga 5 O 12 :Bi and Gd 3 Ga 5 O 12 :Bi should be similar (like in [12]). However, according to [13,14,74,75,110], in Bi 3+ -doped (Gd,Y) 3 Ga 5 O 12 multicomponent garnets, the UV/VIS emission intensity ratio decreases drastically with the increasing Gd content (compare Figure 12b and The data reported above indicate that the UV/VIS emission intensity ratio is not determined only by the band gap energy. Most probably, it depends much more on the probability ratio of the vibronic relaxation in the triplet excited state of Bi 3+ center and the Bi 3+ ionization followed by the formation of the exciton-like state.…”

Section: On the Dependence Of The Uv/vis Emission Intensity Ratio On mentioning

confidence: 95%

“…This is caused by the fact that in case of excitons, the singlet state is located close to the triplet state ( Figure 10b). The probability (k3) of its radiative decay is found to be 10 8 -5 × 10 9 s −1 and the energy distance between the singlet and triplet states E = 75-150 meV (see [9,16,21,74]).…”

Section: Characteristics Of the Visible Luminescencementioning

confidence: 97%

“…As evident from Table 2, the VIS emission is characterized not only by the large Stokes shift and FWHM. In all the works [7,9,[16][17][18]21,69,[72][73][74][75][76][77][78]83,93,95] where the low-temperature luminescence decay kinetics was investigated, also a very small (~1 meV) energy distance D between the two lowest excited levels was reported.…”

Section: Dynamics Of the Bi 3+ -Related Exciton-like Statesmentioning

confidence: 99%

“…Detailed investigations of the VIS emission by the time-resolved spectroscopy methods in a wide temperature range (down to 0.4 K) and determination of the RES parameters carried out in [7,9,13,[16][17][18]21,[72][73][74][75][76][77][78]83,93,95,99,156] allow us to make a justified conclusion on the exciton-like origin of the emission in the considered Bi 3+ -doped compounds. The VIS emission was interpreted as the luminescence of an exciton localized around a Bi 3+ -related center.…”

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

“…Figure 12. Emission spectra of (a) Y3Al5O12:Bi [17], (b) Y3Ga5O12:Bi [13], and (c) Gd3Ga5O12:Bi [74]. T=80 K. Based on the data reported in [13,17,74], presented with the publisher permission.…”

Section: Crystals 2020 10 X For Peer Review 23 Of 52mentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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Section: On the Dependence Of The Uv/vis Emission Intensity Ratio On mentioning

confidence: 95%

Section: Characteristics Of the Visible Luminescencementioning

confidence: 97%

Section: Dynamics Of the Bi 3+ -Related Exciton-like Statesmentioning

confidence: 99%

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

Section: Crystals 2020 10 X For Peer Review 23 Of 52mentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Optical, Structural, and Mechanical Properties of Gd₃Ga₅O₁₂ Single Crystals Irradiated with ⁸⁴Kr⁺ Ions

Karipbayev

Kumarbekov

Manika

et al. 2022

Physica Status Solidi (b)

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Herein, the optical absorption, X‐ray diffraction (XRD) analysis data, and mechanical properties along the ion path are analyzed for gadolinium gallium garnet (Gd3Ga5O12 or GGG) single crystals irradiated with fast 84Kr ions to fluences of 1013–1014 ion cm−2. It is found that the optical absorption spectra of Czochralski‐grown unirradiated GGG crystal consist of relatively narrow lines in the UV spectral range associated with the 4f–4f transitions in Gd3+ ions. Transitions from the 6S7/2 ground state to the 6P, 6J, and 6D states in the Gd3+ cation are visible. An additional absorption band is also observed at 350 nm, which is associated with an uncontrolled Ca impurity. In irradiated GGG single crystals, a shift of the fundamental absorption edge by ≈30 nm to the long‐wavelength part of the spectrum is observed. The observed changes are caused by structural disturbances caused by depletion of the surface layer and an increase in the number of displaced atoms accompanied by an increase in the crystal lattice parameter. XRD analysis shows the presence of size effects and deformation of interplanar distances due to the displacement of atoms from the sites of the crystal lattice with subsequent migration. Hardness measurements show ion‐induced softening, which may be due to ion‐induced amorphization.

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Preparation and properties of Ag plasmonic structures on garnet substrates

et al. 2021

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In this paper technological aspects of preparation of silver nanostructures on garnet substrates and their impact on absorption and photoluminescence have been studied. For this purpose, the changes of plasmonic properties as a function of the Ag NPs preparation features, such as type of substrate material, sputtered silver mass thickness, temperature, and time of thermal treatments were shown. The plasmonic structures were prepared on single-crystalline YAG and GGG garnets as well as amorphous glass substrates by the magnetron sputtering technique. Nucleation and growth of Ag nanoparticles were controlled by a thermal annealing process. Two broad absorption bands peaked at 350-370 nm and 440-650 nm were observed due to quadrupole and dipole modes, respectively, of surface plasmon resonance (SPR) of Ag nanoparticles. Changes of the positions, intensities, and widths of these absorption bands related to the nanoparticle sizes, densities, and shapes are presented. Degradation of the plasmonic structures at ambient conditions, which is revealed as diminishing of the plasmonic absorption bands and associated with sulphidation of Ag nanoparticles in the natural environment, was studied in details. Theoretical simulations of the sulphidation process modelled as coating of Ag nanoparticles with silver sulphide (Ag 2 S) film confirm the experimentally observed diminishing of SPR.

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Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Cited by 24 publications

References 32 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Optical, Structural, and Mechanical Properties of Gd₃Ga₅O₁₂ Single Crystals Irradiated with ⁸⁴Kr⁺ Ions

Preparation and properties of Ag plasmonic structures on garnet substrates

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Origin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films

Cited by 24 publications

References 32 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Optical, Structural, and Mechanical Properties of Gd3Ga5O12 Single Crystals Irradiated with 84Kr+ Ions

Preparation and properties of Ag plasmonic structures on garnet substrates

Contact Info

Product

Resources

About

Optical, Structural, and Mechanical Properties of Gd₃Ga₅O₁₂ Single Crystals Irradiated with ⁸⁴Kr⁺ Ions