In this work, 1.5-μm Pb 0.97 La 0.02 (Zr 0.57 Sn 0.38 Ti 0.05 )O 3 antiferroelectric thick films with and without a ZrO 2 thin layer were deposited on LaNiO 3 (100)/Si(100) substrates. The effects of ZrO 2 thin layer on the microstructure, electrical properties, and especial electrocaloric effect of the antiferroelctric films were studied in detail. Although the films both with and without ZrO 2 buffer layer displayed (100)-preferred orientation possessed dense and uniform surface microstructure, the ZrO 2 -buffered films have an enlarged grain size by 27%, compared with the thick films without the buffer layer. Accordingly, the dielectric constant and saturate polarization of this antiferroelectric thick film was improved by the insertion of ZrO 2 thin layer, and simultaneously its leakage current was slightly reduced. As a result, a great improvement in cooling character caused by ferroelectric-antiferroelectric phase switching, was realized in the ZrO 2 -buffered films.