Spatially-resolved and polarized Raman scattering from a single Si nanowire

Park, S. Y.; Rho, Heesuk; Song, Joong-Ho; Lee, S.-K.; Kim, G.-S.; Lee, C. H.

doi:10.1002/jrs.4689

Cited by 4 publications

(4 citation statements)

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“…studied spatially‐resolved and polarized Raman scattering from a single Si nanowire (NW). Despite the formation of facets and stacking faults, polarized Raman scattering results both from the top and bottom segments of the NW are consistent with the Raman polarization selection rules expected for a cubic crystal . Tang and co‐workers used Au nanorod‐coated Fe 3 O 4 microspheres as SERS substrates for pesticide analysis by near‐infrared laser excitation.…”

Section: Nanomaterialssupporting

confidence: 62%

Recent advances in linear and non‐linear Raman spectroscopy. Part X

Nafie

2016

J Raman Spectroscopy

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This review, published annually, provides an overview of advances in the field of Raman spectroscopy as found in papers published in the preceding calendar year in the Journal of Raman Spectroscopy (JRS), as well as in trends over the past decade across journals that have published papers important to the field of Raman spectroscopy. This information is obtained from statistical data on article counts obtained from Thomson Reuters ISI Web of Science Core Collection by year and by subfield of Raman spectroscopy. Additional information is gleaned from presentations at the XXV International Conference on Raman Spectroscopy (ICORS 2016) in Forteleza, Brazil in August 2016 and those featuring Raman scattering at SCIX 2016 organized by the Federation of Analytical Chemistry and Spectroscopy Societies (FACSS) in Minneapolis, Minnesota, USA in September 2016. Coverage is also provided for topics from the conference ECONOS 2016 held in April in Göteborg, Sweden and GeoRaman 2016 in June in Novosibirsk, Russia. Finally, papers published in JRS in 2015 are highlighted and arragned by topics at the frontier of Raman spectroscopy. From these various perspectives, it is clear that Raman spectroscopy continues to be a rapidly expanding field that provides sensitive photonic information of matter at the molecular level in an ever‐widening arena of novel applications. Copyright © 2016 John Wiley & Sons, Ltd.

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Section: Nanomaterialssupporting

confidence: 62%

Recent advances in linear and non‐linear Raman spectroscopy. Part X

Nafie

2016

J Raman Spectroscopy

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“…For this purpose, Raman spectroscopy is widely employed to measure uniaxial stresses in NWs − with a series of studies specifically addressing Si NWs. ,− Although Raman techniques have demonstrated a strain up to 4.5% in Si NWs patterned on highly strained silicon-on-insulator (sSOI) substrates, ,,, the level of strain reported for Si NWs fabricated on stress-free substrates is limited to 0.048% . In addition to Raman spectroscopy, X-ray diffraction approaches have been utilized to measure strain in Si NWs.…”

Section: Introductionmentioning

confidence: 99%

“…For this purpose, Raman spectroscopy is widely employed to measure uniaxial stresses in NWs 18−20 substrates, 11,21,22,24 the level of strain reported for Si NWs fabricated on stress-free substrates is limited to 0.048%. 23 In addition to Raman spectroscopy, X-ray diffraction approaches have been utilized to measure strain in Si NWs. For example, a strain rate of 0.04% was measured, whose origin was traced back to the catalyst residues used during the growth processes.…”

Section: ■ Introductionmentioning

confidence: 99%

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Esfahani

Pakzad

et al. 2022

ACS Appl. Nano Mater.

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Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environmentin contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

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“…Among a suite of available characterization tools, Raman spectroscopy is a non-destructive technique that can provide insights into the effects of shape, structure, and composition of semiconductor structures (i.e., thin films [22], nanowires [23], and quantum dots [24]) on physical properties (i.e., phonon confinement and surface optical phonon modes [25, 26]). Polarization-dependent Raman scattering measurements on single semiconducting nanowires revealed that highly anisotropic shapes of nanowires have angular dependences of Raman active modes and scattered intensities (i.e., Si [27], GaAs [28], InAs [29, 30], GaP [31, 32], ZnO [33], GaN [34]). Recent advances of Raman spectroscopy technique further achieved the single-molecule level sensitivity of Raman signals through the exploitation of near-field surface resonances [35, 36] using engineered substrates with roughened metal-coated two-dimensional surface (i.e., metal nanoparticle–decorated substrate [37]) or in the form of zero-dimensional metal particles (i.e., core-shell nanoparticles [35]).…”

Section: Introductionmentioning

confidence: 99%

Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method

Park

Chung

2019

Nanoscale Res Lett

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We report optical phonon vibration modes in ensembles of self-catalyzed InP/InAs/InP multi core-shell one-dimensional nanostructures (nanopillars and nanocones) grown on InP(111)B substrates using liquid indium droplets as a catalyst via metal-organic chemical vapor deposition. We characterized the Raman vibration modes of InAs E1(TO), InAs A1(TO), InAs E1(LO), InP E1(TO), InP A1(LO), and InP E1(LO) from the ensemble of as-grown nanostructures. We also identified second-order Raman vibration modes, associated with InP E1(2TO), E1(LO+TO), and E1(2LO), in the InP/InAs/InP core-shell nanopillars and nanocones. Raman spectra of InP/InAs/InP nanopillars showed redshift and broadening of LO modes at low-frequency branches of InAs and InP. Due to the polar nature in groups III–V nanowires, we observed strong frequency splitting between InAs E1(TO) and InAs A1(LO) in InP/InAs/InP nanocones. The Raman resonance intensities of InP and InAs LO modes are found to be changed linearly with an excitation power. By tilting the substrate relative to the incoming laser beam, we observed strong suppression of low-frequency branch of InP and InAs LO phonon vibrations from InP/InAs/InP nanocones. The integrated intensity ratio of InP E1(TO)/E1(LO) for both nanostructures is almost constant at 0-degree tilt, but the ratio of the nanocones is dramatically increased at 30-degree tilt. Our results suggest that Raman spectroscopy characterization with a simple substrate tilting method can provide new insights into non-destructive characterization of the shape, structure, and composition of the as-grown nanostructures for the wafer-scale growth and integration processing of groups III–V semiconducting hetero-nanostructures into nanoelectronics and photonics applications.

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Spatially-resolved and polarized Raman scattering from a single Si nanowire

Cited by 4 publications

References 30 publications

Recent advances in linear and non‐linear Raman spectroscopy. Part X

Recent advances in linear and non‐linear Raman spectroscopy. Part X

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method

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