Spatially Resolved Analysis of Light Induced Degradation of Multicrystalline PERC Solar Cells

Selinger, Marisa; Kwapil, Wolfram; Schindler, Florian; Krauß, Karin; Fertig, Fabian; Michl, Bernhard; Warta, Wilhelm; Schubert, Martin C.

doi:10.1016/j.egypro.2016.07.095

Cited by 26 publications

(21 citation statements)

References 3 publications

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“…3. As many previous lifetime studies have observed the strongest LeTID at dislocation clusters (regardless of LeTID defect density in the good grains) [8,16,17], the SiN x :H deposition affects LeTID mostly by reducing the defect density in the good grain areas. Furthermore, the lifetime sample shows no difference between LeTID at grain boundaries and in good grain areas, which corresponds to the IQE and PL maps of PERC B in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The drawbacks of these mapping methods are the imprecise injection levels, which vary over different grain structures and between the two measurement states. Nevertheless, injection-controlled lifetime studies have confirmed zones of denuded LeTID around the grain boundaries [16] but reported higher defect densities at dislocation clusters compared with homogenous grain degradation [16,17]. In PERC B, the strongest degradation is measured at recombination-active dislocation clusters, whereas the good grains areas show only low LeTID.…”

Section: Resultsmentioning

confidence: 99%

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Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells

Lindroos¹,

Zuschlag²,

Carstensen³

et al. 2018

AIP Conference Proceedings

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, and Giso Hahn giso.hahn@uni-konstanz.deAbstract. Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline PERC silicon solar cells, depending mainly on the solar cell processes. We show that despite high firing temperatures, LeTID can manifest itself in two different ways: 1) strong LeTID in good grains (jsc and Voc losses >7%rel.), or 2) low LeTID in good grains with stronger LeTID at dislocation clusters. Such LeTID at dislocation clusters is not only caused by a bulk recombination increase but also by an increased back-surface recombination velocity.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells

Lindroos¹,

Zuschlag²,

Carstensen³

et al. 2018

AIP Conference Proceedings

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“…Thus, degradation mechanisms as BO activation, FeB dissociation, and Sponge-LID have a minor effect on these samples and can be neglected. The subsequent degradation at 75 °C leads to the typical lateral appearance known for mc-LID (abstract figure) with enhanced intra-grain degradation and less affected grain boundaries [5,6,16]. The efficiency drops almost 15% rel and reaches a minimum after about 60 h of light soaking at 75 °C, see Fig.…”

Section: Results and Discussion 31 Mc-lid Kinetics And Loss Analysismentioning

confidence: 99%

Microstructural identification of Cu in solar cells sensitive to light‐induced degradation

Luka

Turek

Großer

et al. 2017

Physica Rapid Research Ltrs

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Light‐induced degradation (mc‐LID or LeTID) can lead to a severe efficiency loss in multi‐crystalline solar cells. The underlying mechanism clearly distinguishes from known mechanisms as B‐O‐LID and Fe‐B‐LID. Various defect models have been suggested for mc‐LID mainly based on metal impurities, including Cu which is known to cause light‐induced degradation. We investigate mc‐LID sensitive PERC cells that show an efficiency degradation of 15%rel. The weaker degradation of the grain boundaries (GBs) typical for mc‐LID is identified and further investigated from front and rear side with respect to recombination activities. The combination of local electrical measurements (LBIC), target preparation (REM, FIB) and element analysis (EDX, TEM) unveil Cu‐containing precipitates at the rear side of the solar cells. They accumulate at grain boundaries and at the rear surface of the Si‐bulk material where the passivation stack is damaged. We conclude that Cu originates from the cell material and discuss its relation to mc‐LID.

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“…Introduction : In 2012, multi‐crystalline silicon (mc‐Si) passivated emitter and rear cells (PERC) were shown to suffer from strong light‐induced degradation effects, and this has been the focus of many subsequent studies . The degradation and subsequent regeneration rates are sped‐up with increasing temperature, leading to the widely used terminology to describe this phenomenon, light and elevated temperature induced degradation (LeTID).…”

mentioning

confidence: 99%

Modulation of Carrier‐Induced Defect Kinetics in Multi‐Crystalline Silicon PERC Cells Through Dark Annealing

et al. 2017

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In this letter, we report on significant changes caused after dark annealing to the kinetics of the carrier‐induced defect, present in p‐type multi‐crystalline silicon PERC cells. The characteristic shapes of the degradation and regeneration curves under light soaking at 75 °C are dramatically altered, depending on the temperature of an initial dark anneal on the non‐degraded cell. Dark annealing for a fixed time (2.5 h) at temperatures of 200 °C or below, is found to accelerate both the subsequent degradation and regeneration rate and the degradation severity, while at higher temperatures it appears that a possible second defect with a significantly longer degradation and regeneration rate is activated. Through a further increase of the dark annealing temperature, the magnitude of this slow degradation is suppressed. This data provides essential information into the role that thermal history plays in the behavior of the still unidentified defect or defects, which is crucial for future studies of the degradation and methods to mitigate it.

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Spatially Resolved Analysis of Light Induced Degradation of Multicrystalline PERC Solar Cells

Cited by 26 publications

References 3 publications

Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells

Light-induced degradation variation in industrial multicrystalline PERC silicon solar cells

Microstructural identification of Cu in solar cells sensitive to light‐induced degradation

Modulation of Carrier‐Induced Defect Kinetics in Multi‐Crystalline Silicon PERC Cells Through Dark Annealing

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