Spatially extended nature of resistive switching in perovskite oxide thin films

Abstract

We report the direct observation of the electric pulse induced resistancechange (EPIR) effect at the nano scale on La 1-x Sr x MnO 3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short pulse voltage switching conditions. It is important for future nanoscale non-volatile memory device applications.[*]

The mechanism of electroforming of metal oxide memristive switches

“…A simplified memristor device physics model [1] matched the experimental behavior [2] of nanocrossbar Pt/TiO 2 /Pt devices. Resistive switching in metal oxides has in fact seen more than four decades of scientific research [4][5][6][7][8][9][10][11][12][13][14][15], motivated in large part by that prospect of a fast and high density NVRAM technology [16][17][18][19][20][21][22][23]. The continuous resistance change exhibited by oxide switches also appears to meet analog switch requirements for neuromorphic computing [24][25][26].…”

Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems

“…Resistive switching has been commonly observed in various oxides, e.g., Cu x O, 1 NiO, 2,3 TiO 2 , 4-6 SrTiO 3 , 7-9 BaTiO 3 , 10 ͑Ba, Sr͒TiO 3 , 11 SrZrO 3 , 12 La 1−x Sr x MnO 3 , 13 and Pr 1−x Ca x MnO 3 , [14][15][16] as well as in higher chalcogenides, e.g., Ag or Cu doped Ge x Se 1−x , 17,18 Ag 2 S, 19 and Cu 2 S. 20 Quite diverse switching mechanisms have been proposed, based on thermal, electronic, and/or electrochemical effects. In particular, when one involved electrode metal is situated in the intermediate range of the electrochemical potential series and forms mobile cations, such as Ag + and Cu + , bipolar switching characteristics are observed, and electrochemical redox processes are generally accepted to be responsible for the switching.…”

Charge-induced series resistance switching in GaAs solar cells

“…[10][11][12][13][14] At a threshold voltage called the traps-filled-limit voltage, current flow undergoes a sharp transition from a relatively high-resistance Ohm's law regime to a low-resistance Mott-Gurney's law regime as manifested by a steep rise in current. Resistance switching in metal/oxide/metal devices has been observed and attributed to interface 15 or bulk 16,17 charge-induced changes in the interface barrier height. Capacitance-voltage measurements indicate that there is no insulating layer at the n-GaAs / semi-insulating GaAs substrate interface.…”