Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics

Abstract

Doped semiconductors are the most important building elements for modern electronic devices . In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development . Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS, Cu intercalated bilayer SnS obtained by this technique displays a hole field-effect mobility of ~40 cm Vs, and the obtained Co-SnS exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene . Combining this intercalation technique with lithography, an atomically seamless p-n-metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.

Stacked Janus Device Concepts: Abrupt pn-Junctions and Cross-Plane Channels

“…1,2 Other recent relevant examples include how the stacking environment of 2D materials can be used to tune properties like the optical gap, 3,4 mobility, 5 interlayer excitons 6,7 and local doping. 8,9 One key focus has so far been to find TMD's with different band gaps. 10 However, the properties of Janus MoSSe are far more interesting than simply an expected band gap in between the two out-of-plane symmetric parents (MoS 2 and MoSe 2 ).…”

Simultaneous Manipulation of O‐Doping and Metal Vacancy in Atomically Thin Zn10In16S34 Nanosheet Arrays toward Improved Photoelectrochemical Performance

“…Elemental doping and introduction of vacancies are two effective routes to regulate the electronic structure and reduce the recombination. Doping can promote charge separation or create a doped overlayer for catalyzing the surface water oxidation reaction .…”

Boosting Visible‐Light Photocatalytic Redox Reaction by Charge Separation in SnO2/ZnSe(N2H4)0.5 Heterojunction Nanocatalysts

“…Although electrochemical analysis is ap owerful analytical tool, organic dye degradatione xperimentsc an still provide intuitive evaluation results of the photocatalytic activity. [41][42][43][44][45][46] In these experiments, we employed visible light (l ! 400 nm) from an incident Xe lamp with cut-off filters to eliminate the direct decomposition effect of RhB by UV light.…”