Spatial uniformity of responsivity for silicon, gallium nitride, germanium, and indium gallium arsenide photodiodes

Abstract

For almost a decade, the National Institute of Standards and Technology (NIST) has supplied to its customers calibrated photodiode standards and special tests of photodetectors for absolute spectral responsivity from 200 nm to 1800 nm. During this time spatial responsivity measurements have been made on several dozen Hamamatsu silicon S1337-1010BQ photodiodes. We have found that the spatial responsivity changes with wavelength, sometimes significantly as the wavelength approaches the bandgap. The most significant changes appear to be caused by defects in the photodiode material and are not apparent over most of the wavelength region where the photodiode operates. The change in spatial uniformity with wavelength can significantly contribute to measurement uncertainties. These measurements have been repeated and the spatial responsivities have remained constant over several years. Measurements have also been made on other types of Si, GaN, Ge, and InGaAs photodiodes. The measurement equipment, method, and results are presented.

Compact two-element transmission trap detector for 1550 nm wavelength

“…Figure 8 shows that the responsivities for s and p polarization states of the incident beam are spatially uniform within less than 0.5%. The results show that the spatial uniformity of the two-element InGaAs transmission trap detector is comparable with that of the single windowless InGaAs photodiode (Hamamatsu G8370-10SPL) (figure 9) and with other similar InGaAs photodiodes [9,10] and InGaAs reflection trap detectors [11].…”

Characterization of germanium photodiodes and trap detector

“…In these measurements, the beam diameter was 1 mm and the step size was 0.5 mm. The results show that the Ge photodiodes can attain a spatial uniformity level which is comparable to that reached with silicon photodiodes in the wavelength region where they have significant responsivity [7]. This is a beneficial property, when Ge photodiodes are considered to be used, for instance, as transfer standards in fibre optic power measurements [14].…”

“…The use of Ge photodiodes in the trap configuration was reported earlier by Stock et al in 2003 [4]. Unfortunately, the spatial nonuniformities of Ge photodiodes have traditionally been at the level of ∼1% [6,7], making InGaAs technology more attractive for high accuracy radiometric measurements in the near-infrared wavelength region.…”

Growth and characterization of a Li2Mg2(MoO4)3 scintillating bolometer

“…4. Indeed, the wide spectral sensitivity of germanium photodetectors (400 − 1700 nm [44]) covers the emission spectral range of the Li 2 Mg 2 (MoO 4 ) 3 crystal.…”