Spatial distributions of near-band-gap uv and yellow emission on MOCVD grown GaN epifilms

Tu, Li; Lee, Y. C.; Stocker, D. A.; Schubert, E. Fred

doi:10.1103/physrevb.58.10696

Cited by 20 publications

(8 citation statements)

References 21 publications

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“…Similarly, focusing the laser beam and using small slit widths of a monochromator for the entire PL spectrum would also distort the PL in favor of excitonic transitions. In such a case, the chromatic dispersion of lenses used to collect the PL, as well as the different effective sizes of the emission spots for the ultraviolet ͑UV͒ and visible emission attributed, in particular, to photon-recycling process, 69 may lead to a marked, but artificial, enhancement of the UV ͑near band edge͒ over the visible part in the PL spectrum ͑mainly defect-related͒.…”

Section: A Steady-state Photoluminescencementioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,804

119

1,666

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Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

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Section: A Steady-state Photoluminescencementioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,804

119

1,666

View full text Add to dashboard Cite

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“…This is due to their many good properties like the efficient, long-lasting light-emitting capability, especially in the visible range, the chemical stability, the mechanical strength and the high temperature endurance [1][2][3][4][5][6]. Recently, a number of GaN field-effect transistors (FETs) such as hetero-bipolar transistors, metal-oxide-semiconductor hetero-structure FETs and metal-insulator-semiconductor (MIS) FETs have been reported.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Reddy

Boppana

et al. 2011

Journal of Alloys and Compounds

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“…Among the three models compared, the LD model provided best descriptions of scattering profiles for apple fruit. The finding is not surprising in view of the fact that LD has been widely used to study the spectral shape of chemical and metallic compositions (Bizheva et al, 1998;Tu et al, 1998;Gupta et al, 2003;Klar et al, 1998). Gupta et al (2003) used LD to profile a laser power density on the Raman spectrum of silicon nanowires.…”

Section: Discussionmentioning

confidence: 94%

Modeling Multispectral Scattering Profiles for Prediction of Apple Fruit Firmness

Peng¹,

Lu²

2005

Transactions of the ASAE

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The objective of this research was todevelop mathematical models to describe the relationship between fruit firmness and multispectral scattering profiles from apples. Scattering images were acquired from Red Delicious apples using two different multispectral imaging systems at wavelengths 680 nm, 880 nm, 905 nm, and 940 nm with a bandpass of 10 nm. Radial scattering profiles were described accurately by a Lorentzian distribution function with three independent profile parameters. Firmness prediction models were constructed using multi− linear regression against twelve Lorentzian parameters for four wavelengths, and they were verified with separate sets of apple fruit. The prediction models gave firmness predictions with the correlation coefficient (r) of 0.82 and the standard error for validation (SEV) of 6.

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Spatial distributions of near-band-gap uv and yellow emission on MOCVD grown GaN epifilms

Cited by 20 publications

References 21 publications

Luminescence properties of defects in GaN

Luminescence properties of defects in GaN

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Modeling Multispectral Scattering Profiles for Prediction of Apple Fruit Firmness

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