Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

“…There are also many studies on the metal‐insulator‐semiconductor (MIS) based SBD in particular owing to the advantage in lowering the reverse saturation current . The GaN based MIS structure has been used for switching devices, where the presence of the insulating layer would provide lower leakage current and reducing power consumption . MIS based GaN SBD has been fabricated with SiO 2 , Si 3 N 4 , and HfO 2 etc.…”

Ferroelectric Bi3.25La0.75Ti3O12 photodiode for solar cell applications

“…The higher value of ideality factor, compare to ideal value of 1, indicates that the current is influenced by the TE mechanism. The higher value of the ideality factor shows the presence of inhomogeneities of barrier height, the particular distribution of the interface states, generation-recombination currents within the space-charge region and series resistance [13,31,33,34].…”

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…As seen in Fig. 1, at higher forward-bias voltages, ln(I)-V curves under dark conditions deviate from linearity due to the parasitic resistance effects, interface states, etc [19][20][21][22][23][24][25][26]. The obtained ideality factor (n) of the diodes were determined from the Fig.1 [12].…”