Spatial distribution of deep level traps in GaNAs crystals

Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell

“…They attributed it to a split interstitial defect formed from one nitrogen [9,10]. In this study, as shown in Fig.…”

“…3, the hole trap HC5 has the same electronic properties of the double donor state of EL2. Compared with previous publications, this deep level can be similar to H3 and HA5 [9,10], which are proposed to be the double donor state (+/++) of EL2 [10,12,13].…”

“…Its activation energy comes closer to the valence band (Ev + 0.1 eV) with increasing nitrogen amount in the alloy. In addition, in the sample S3, the concentration of HC2 has the same order of magnitude as H1 [9]. Then, it can possible to assimilate HC2 to H1 and HA1.…”

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

“…It is generally [16], b [26], c [27], d [28], e [36], f [29], g [34], h [32] considered that EL2 level is related to the isolated arsenic antisite defect (As Ga ) or defect complex involving As Ga with interstitials and/or vacancies (As i , V As , V Ga ) [34,37] and its formation is favorable under the As-rich conditions. The EL2 defect is also commonly observed in GaNAs and GaInNAs layers grown by different techniques [6,14,27,30].…”

“…It is generally known that while the undoped GaAs is usually n-type, a dilute GaNAs can be p-type or n-type, depending on the growth conditions and the type of elemental sources used in different growth techniques. The results presented in the literature indicate that as-grown, unintentionally doped GaNAs grown by MOVPE [13,14] or MBE [15] is usually p-type, however for example a CBE growth can result in the n-type GaNAs material [16]. It has been speculated that this ptype background doping is a result of unintentional carbon contaminations [1,17,18].…”