Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk, Ł.; Dąbrowska-Szata, M.; Ściana, B.; Pucicki, D.; Radziewicz, D.; Kopalko, K.; Tłaczała, M.

doi:10.1515/msp-2016-0126

Cited by 11 publications

(5 citation statements)

References 36 publications

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“…indicate that with increasing t p , the peaks do not shift significantly toward lower temperatures. Based on this and on previous papers [25][26][27][28][29][30][31][32][33][34][35][36], we suggest that E1 and E3 originate from point defect located near dislocations, rather than from a dislocation core.…”

Section: Capture Kineticssupporting

confidence: 74%

“…The most probable physical origin of trap E1 is As vacancies (V As ) or the antisite defect As Ga as reported in [25]. The investigation of the signature of E2 led us to hypothesize that it is associated with the oxygen related center EL3 (oc-O As ) [26][27][28][29][30][31]. The signature of trap E3 was found to be similar to a well-known GaAs native defect called EL2, that corresponds to an As antisite defect As Ga [25,29,[31][32][33][34][35].…”

Section: Arrhenius Plot Comparisonmentioning

confidence: 85%

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Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Zenari¹,

Buffolo²,

Santi³

et al. 2021

J. Phys. D: Appl. Phys.

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The aim of this paper is to identify, analyze and compare the defects present in III-As, as a function of dislocation density, and as a function of the presence/absence of quantum dots (QDs). Such materials are of fundamental importance for the development of lasers and photodiodes for silicon photonics. The study is based on an extensive deep-level transient spectroscopy investigation, carried out on GaAs pin diodes grown on Si and on GaAs (that differ in the dislocation density), with and without embedded QDs. The original results described in this paper demonstrate that: (a) we were able to identify four different defects within the device grown on Si (three electron and one hole traps) and one defect (hole trap) in the device on GaAs, common to both samples; (b) all the majority carrier traps identified are located near midgap, i.e. are efficient non-radiative recombination centers; (c) such defects are absent (or non-detectable) in the sample grown on GaAs substrate, having a very low dislocation density; (d) the presence of QDs does not result in additional defects within the semiconductor material; (e) the analysis of the capture kinetics revealed that two of the identified traps are related to point defects, whereas the other two traps can be associated with point defects located near a dislocation; (f) a comparison with previous reports indicate that the detected traps are related to native III-As defects, or to oxygen-related complexes.

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Section: Capture Kineticssupporting

confidence: 74%

Section: Arrhenius Plot Comparisonmentioning

confidence: 85%

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Zenari¹,

Buffolo²,

Santi³

et al. 2021

J. Phys. D: Appl. Phys.

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show abstract

“…Based on these characteristics, the most important parameters such as shortcircuit current density (J sc ), open circuit voltage (V oc ), fill factor (FF), and power conversion efficiency (η) under standard illumination (AM 1.5 G, 100 mW cm −2 , 300 K) were calculated and analyzed. The properties of the materials used in the simulations were acquired from the literature [30][31][32][33][34][35][36]. The parameters for Cu 2 O, CuO, and ZnO used in the simulations are provided in table 1.…”

Section: G X E Dmentioning

confidence: 99%

Modelling and numerical analysis of ZnO/CuO/Cu₂O heterojunction solar cell using SCAPS

Lâm

2020

Eng. Res. Express

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In this work, the SCAPS-1D program was utilized to perform simulations of ZnO/CuO/Cu 2 O thinfilm solar cells. Based on the cell structure and device fabrication process, solar cell structure parameters such as the thickness of the CuO layer, ZnO layer, donor density in the ZnO layer were evaluated in detail. The results indicated that an optimal structure of ZnO/CuO/Cu 2 O thin-film solar cell could be obtained when the thickness of the ZnO layer, CuO layer, and donor density in the ZnO layer is 100 nm, 500 nm, 1×10 17 cm −3 , respectively. The optimized solar cell structure of ZnO/CuO/Cu 2 O shows a potential efficiency of about 12% under the 1 sun air mass 1.5 G spectrum illumination. Besides that, the performance of the cell under individual solar concentrations and operating temperatures was also investigated.

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“…On the other hand, defect E1 was considered to be not related to hydrogen, and additionally, some nitrogen-related defects have been reported with activation energies of 0.13-0.24 eV depending on the nitrogen concentration (2.7-1.2%). 36) Therefore, defect E1 was speculated to be a nitrogen-related defect.…”

Section: Samplementioning

confidence: 99%

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Miyashita

Okada

2018

Jpn. J. Appl. Phys.

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Deep-level defects were investigated and compared among three molecular beam epitaxy (MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as-grown and the other two were annealed in a metal organic chemical vapor deposition (MOCVD) atmosphere (H 2 and AsH 3 ) or a nitrogen (N 2 ) atmosphere. A residual defect in the as-grown sample was firstly discovered and considered to be mainly responsible for the degradation in GaInNAsSb solar cells. Meanwhile, an N-H-related defect was confirmed, as well as the effects on background carrier concentration (BGCC) together with hydrogen incorporation. The N 2 annealing showed a significant effectiveness of suppressing the defects and improving the solar cell properties.

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Cited by 11 publications

References 36 publications

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Modelling and numerical analysis of ZnO/CuO/Cu₂O heterojunction solar cell using SCAPS

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Cited by 11 publications

References 36 publications

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

Modelling and numerical analysis of ZnO/CuO/Cu2O heterojunction solar cell using SCAPS

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

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Modelling and numerical analysis of ZnO/CuO/Cu₂O heterojunction solar cell using SCAPS