“…Therefore, the optical emission from B 3 Π g , v = 3 to A 3 Σ + u , v = 1 and the densities of A 3 Σ + u , v = 0 are plotted again for different rf power in figure 10. Firstly, as it is expected, the asymmetric character of the optical emission profiles increases with the self-bias voltage and the maximum shifts toward the powered electrode, because electron impact excitation is the most important excitation process, located at the sheath edge [6]. In contrast to the optical emission, the A 3 Σ + u , v = 0 density profiles are still symmetric, whereas the absolute A 3 Σ + u , v = 0 density decreases with increasing self-bias voltage.…”