Spatial control over atomic layer deposition using microcontact-printed resists

Jiang, Xirong; Chen, Rong; Bent, Stacey F.

doi:10.1016/j.surfcoat.2007.04.126

Cited by 52 publications

(63 citation statements)

References 37 publications

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“…This work followed an earlier demonstration in 1997 of area-selective CVD of Pt using mCP SAMs by Jeon et al [5]. Jiang et al also examined [59] 206j 9 Nanopatterning by Area-Selective Atomic Layer Deposition AS-ALD of Pt and HfO 2 through mCP in a series of papers [48,56]. In one of their studies, the pattern transfer was performed onto yttrium-stabilized zirconia (YSZ) for fuel cell applications.…”

Section: Microcontact Printingmentioning

confidence: 87%

“…The deposition selectivity of Pt AS-ALD using mCP with a PDMS stamp was confirmed with up to 1 mm resolution. In addition, it was found that the contact time is essential [48,56]. Because the organosilane molecules need a certain length of time to form a quality SAM on the substrate, the stamp should be kept on the substrate for above a minimum time during ink transfer.…”

Section: Microcontact Printingmentioning

confidence: 99%

“…The nature of the ALD precursor is another factor that may affect the deactivation of film deposition by SAMs. In one study, even though the same ODTS SAM was used as a deactivation agent for both HfO 2 and Pt ALD, the ability to block the deposition of Pt was higher than that of HfO 2 [48]. This may be due to precursor size or inherent reactivity [48].…”

mentioning

confidence: 99%

“…In one study, even though the same ODTS SAM was used as a deactivation agent for both HfO 2 and Pt ALD, the ability to block the deposition of Pt was higher than that of HfO 2 [48]. This may be due to precursor size or inherent reactivity [48]. Bent and coworkers have in a series of studies reported the effects of the SAM coating quality on the blocking properties [39,52,56,59,64,68,69].…”

mentioning

confidence: 99%

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Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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Section: Microcontact Printingmentioning

confidence: 87%

Section: Microcontact Printingmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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“…Atomic layer deposition (ALD) is a technology which can be used to fabricate a very high-quality thin films based on alternate selflimiting surface chemical reactions which have extreme uniformity on the three-dimensional structures, high density, low porosity, freedom from defect [1][2][3][4], with conformality and precise thickness control [5][6][7]. It has been applied in the numerous advanced technologies for the fabrication of nanoscale thin films such as microelectronics, Complementary Metal oxide Semiconductor (CMOS) transistors, DRAM memory, MEMS/NEMS, energy conversion, photovoltaics, and display devices [8][9][10][11][12] that require precise control of film properties in thickness, uniformity, and conformability.…”

Section: Introductionmentioning

confidence: 99%

A Review of Atomic Layer Deposition for Nanoscale Devices

Riyanto

Rijanto

Prawara

2012

J. Mechatron. Electr. Power Veh. Technol.

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Atomic layer deposition (ALD) is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM), and microelectromechanic system (MEMS). By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.Key words: thin coating, atomic layer deposition, nanoscale devices. Abstrak Atomic layer deposition (ALD) adalah teknik penumbuhan lapisan tipis yang menggunakan reaksi kimia jenuh antara gas pendahulu untuk mendapatkan deposisi lapisan skala nano. Teknik ini menjadi subyek yang sangat menarik saat ini untuk deposisi lapisan sangat tipis pada berbagai aplikasi seperti mikroelektronik, photovoltaic, dynamic random access memory (DRAM) dan sistem mikroelektromekanik (MEMS

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Atomic Layer Deposition on Soft Materials

Parsons

2011

Atomic Layer Deposition of Nanostructured Materials

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Spatial control over atomic layer deposition using microcontact-printed resists

Cited by 52 publications

References 37 publications

Nanopatterning by Area‐Selective Atomic Layer Deposition

Nanopatterning by Area‐Selective Atomic Layer Deposition

A Review of Atomic Layer Deposition for Nanoscale Devices

Atomic Layer Deposition on Soft Materials

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