Abstract:T h e o p e n -a c c e s s j o u r n a l f o r p h y s i c s Abstract. Time-resolved emissive probe measurements have been performed to study the spatio-temporal development of the plasma potential in an asymmetric bipolar pulsed magnetron discharge. The influence of the substrate potential as well as of the substrate position has been investigated while the further conditions were the same. To access the entire potential range which was between −100 V and + 400 V and to obtain sufficient time-resolution of th… Show more
“…As can be seen in Figure 3 and 4, three distinct pulse phases can be identified within a pulse cycle on one magnetron: a standard highly negative voltage phase, a short‐lived (less than 1 µs) positive voltage overshoot and an almost steady‐state positive low‐voltage phase. This behavior is similar to that observed for usual asymmetric bipolar pulsed dc discharges with a single magnetron 13, 18, 20, 23, 27. However, the negative currents measured for both arrangements of our dual magnetron system (DF and DG) are much higher compared to the single magnetron systems (cf.…”
Section: Resultssupporting
confidence: 88%
“…Pulsing the discharge has also been shown to have benefits for thin film properties due to changes in ion‐assisted deposition processes. Recently, valuable results contributing to the elucidation of the complicated phenomena in asymmetric bipolar pulsed dc discharges with a single magnetron have been published 13, 18–23…”
Pulsed dc dual magnetron sputtering was used for preparation of photocatalytic crystalline TiO2 films. The depositions were performed in an Ar + O2 gas mixture at a total pressure of 0.9 Pa with an oxygen partial pressure of 0.2 Pa. The maximum substrate surface temperature was 160 °C. Both magnetrons operated in the same asymmetric bipolar mode at the repetition frequency of 100 kHz with a fixed 50% duty cycle, but their operations were shifted by a half of the period. Time‐averaged energy‐resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. A suppression of high‐energy ions in the flux onto the substrate resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO2 films.
“…As can be seen in Figure 3 and 4, three distinct pulse phases can be identified within a pulse cycle on one magnetron: a standard highly negative voltage phase, a short‐lived (less than 1 µs) positive voltage overshoot and an almost steady‐state positive low‐voltage phase. This behavior is similar to that observed for usual asymmetric bipolar pulsed dc discharges with a single magnetron 13, 18, 20, 23, 27. However, the negative currents measured for both arrangements of our dual magnetron system (DF and DG) are much higher compared to the single magnetron systems (cf.…”
Section: Resultssupporting
confidence: 88%
“…Pulsing the discharge has also been shown to have benefits for thin film properties due to changes in ion‐assisted deposition processes. Recently, valuable results contributing to the elucidation of the complicated phenomena in asymmetric bipolar pulsed dc discharges with a single magnetron have been published 13, 18–23…”
Pulsed dc dual magnetron sputtering was used for preparation of photocatalytic crystalline TiO2 films. The depositions were performed in an Ar + O2 gas mixture at a total pressure of 0.9 Pa with an oxygen partial pressure of 0.2 Pa. The maximum substrate surface temperature was 160 °C. Both magnetrons operated in the same asymmetric bipolar mode at the repetition frequency of 100 kHz with a fixed 50% duty cycle, but their operations were shifted by a half of the period. Time‐averaged energy‐resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. A suppression of high‐energy ions in the flux onto the substrate resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO2 films.
“…When the discharge is pulsed asymmetric bipolar, V T is modulated. In the ‘on’ phase it is negative with a deep valley of about −900 V about 2 µs after switching before it settles at a value of about −200 V. In the ‘off’ phase it attains high positive values of up to +260 V immediately after switching before, after some oscillations, it settles at about +40 V. V Pl has been found to follow these changes in the ‘off’ phase but keeps close to zero in the ‘on’ phase 9, 15, 22. Because the energy of the positive ions which are formed in the plasma bulk is determined by V Pl , the IEDFs reproduce the changes in V Pl .…”
Section: Discussionmentioning
confidence: 93%
“…The chamber contained a planar magnetron source which was equipped with a circular target of ZnO with 2 wt.‐% Al 2 O 3 (purity 99.95%) having a diameter of 100 mm. Further details of the magnetron source and its magnetic field are given elsewhere 15. The magnetron was operated with d.c. or pulsed d.c. For d.c., an MDX 1.5K power supply (Advanced Energy) was used in the power controlled mode with a discharge power of 100 W. Asymmetric‐bipolar operation with a positive target voltage in the ‘off’ phase of 10% of the average negative value during the ‘on’ phase was achieved by a Pinnacle Plus unit (Advanced Energy).…”
Ion energy distributions have been measured with an energy‐dispersive mass spectrometer during magnetron sputtering of Al doped ZnO. A d.c. and a pulsed d.c. discharge have been investigated. Different positive ions from the target material have been observed with low energies in d.c. and a second energy peak of about 30 eV in pulsed d.c. with only weak additional energy due to the sputter process. Negative ions are mainly O− with energies corresponding to the target voltage of several 100 eV. They originate from the target and barely from the (O2) gas and hit the substrate opposite the race track. In pulsed d.c., due to the varying target voltage, energies of up to 500 eV have been observed. With increasing pressure, negative ions at the substrate are reduced exponentially in their density but not in their energy.
“…τ=R sh C g . 28 As proposed by Welzel et al, 33 sheath resistance can be calculated by the ratio of voltage drop between probe and bulk plasma (k B T e ) and the electron thermal current through the sheath (A p en e k B T e 2πm e ), when electron density (n e ) and the electron temperature (T e ) are known. By taking precautions, the probe setup capacitance to ground could be reduced upto ∼220 pF.…”
An electron emitting probe in saturated floating potential mode has been used to investigate the temporal evolution of plasma potential and the effect of substrate RF biasing on it for pulsed dual frequency (2 MHz/13.56 MHz) inductively coupled plasma (ICP) source. The low frequency power (P2MHz) has been pulsed at 1 KHz and a duty ratio of 50%, while high frequency power (P13.56MHz) has been used in continuous mode. The substrate has been biased with a separate bias power at (P12.56MHz) Argon has been used as a discharge gas. During the ICP power pulsing, three distinct regions in a typical plasma potential profile, have been identified as ‘initial overshoot’, pulse ‘on-phase’ and pulse ‘off-phase’. It has been found out that the RF biasing of the substrate significantly modulates the temporal evolution of the plasma potential. During the initial overshoot, plasma potential decreases with increasing RF biasing of the substrate, however it increases with increasing substrate biasing for pulse ‘on-phase’ and ‘off-phase’. An interesting structure in plasma potential profile has also been observed when the substrate bias is applied and its evolution depends upon the magnitude of bias power. The reason of the evolution of this structure may be the ambipolar diffusion of electron and its dependence on bias power.
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