Abstract:Ion energy distributions have been measured with an energy‐dispersive mass spectrometer during magnetron sputtering of Al doped ZnO. A d.c. and a pulsed d.c. discharge have been investigated. Different positive ions from the target material have been observed with low energies in d.c. and a second energy peak of about 30 eV in pulsed d.c. with only weak additional energy due to the sputter process. Negative ions are mainly O− with energies corresponding to the target voltage of several 100 eV. They originate f… Show more
“…21 Moreover, a shoulder is clearly observed in the high-energy edge of the energy distribution functions of the O À ions. Similar behaviors have been also found, [22][23][24] which may be due to (1) the collision cascades in the target during sputtering 23 momentum exchange at high energy, which gives rise to a loss of the negative charge on collision, so that the collided ion would be completely removed from the observed distribution. 24 In summary, we investigated the energy distribution of the negative ion generated from an IGZO ceramic target in a dc magnetron sputtering process by in situ analyses.…”
The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O− with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O2). Dissociation of ZnO−, GaO−, ZnO2−, and GaO2− radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O− ion flux.
“…21 Moreover, a shoulder is clearly observed in the high-energy edge of the energy distribution functions of the O À ions. Similar behaviors have been also found, [22][23][24] which may be due to (1) the collision cascades in the target during sputtering 23 momentum exchange at high energy, which gives rise to a loss of the negative charge on collision, so that the collided ion would be completely removed from the observed distribution. 24 In summary, we investigated the energy distribution of the negative ion generated from an IGZO ceramic target in a dc magnetron sputtering process by in situ analyses.…”
The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O− with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O2). Dissociation of ZnO−, GaO−, ZnO2−, and GaO2− radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O− ion flux.
“…The spatial distribution of the O − ion flux density was investigated in several works, which generally found a larger flux density near x e , corresponding to the largest plasma density or, equivalently, to the strongest magnetic field at the target [9,28,41]. It is difficult to extract quantitative trends, because the flux density distribution depends on the age of the target [9,42], the strength of the magnetic field in the magnetron [10], the type of excitation [9] (RF or DC), and energy-dispersive measurements are typically affected by the limited acceptance angle of the probe [9,15]. However, it can be assumed that increasing deposition pressure leads to a reduction in the flux density gradient due to a larger contribution from species with an off-normal incidence angle caused by more frequent collisions.…”
Section: Review Of Particle Energy Flux Distributions In Azo Sputter mentioning
confidence: 99%
“…Mainly two explanations exist for this phenomenon: 1) bombardment of the film by inhomogeneously distributed energetic particles during deposition [7]; 2) inhomogeneity in the amount and activity of oxygen reaching the substrate, which results in non-optimal oxygen stoichiometry in certain regions of the film [8]. According to hypothesis (1), O − and O − 2 ions (the former being more abundant) [9,14,15] are formed at the target and accelerated through the cathode sheath up to an energy corresponding to the target DC bias voltage. Upon leaving the cathode sheath, such a collimated beam of energetic ions travels mostly perpendicular to the target surface with a small collision cross section with the working gas [16].…”
Abstract. The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low-and intermediate pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.
“…In most cases Ar and the sputtered species from the target have been measured (see e.g., Refs. [10][11][12][13][14][15][16]. With the advent of high power impulse magnetron sputtering (HIPIMS) in the last years, especially for metals and oxides, also such high-energy density discharges have been investigated, partly also time-resolved.…”
Spectra of the ion mass and energy distributions of positive ions in reactive (Ar/O2) and nonreactive (Ar) dc magnetron sputtering discharges have been investigated by energy-resolved mass spectrometry. The results of three sputter target materials, i.e., Cu, In, and W are compared to each other. Besides the main gas constituents, mass spectra reveal a variety of molecular ions which are dependent on the target material. In reactive mode, ArO+ is always observed in Ar/O2 but molecules containing Ar and the metal were exclusively found for the Cu target. The occurrence of the different ions is explained in the context of their bond strengths obtained from density functional theory calculations. The energy spectra generally contain the known low-energy peak corresponding to the plasma potential. Differently extended high-energy tails due to sputtered material were observed for the different targets. Besides these, high-energetic ions were detected with up to several 100 eV. Their energies are significantly different for Ar+ and O+ with Ar+ strongly depending on the target material. The spectra are discussed together with results from transport of ions in matter (TRIM) calculation to elucidate the origin of these energetic ions.
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