“…The test-based and run-time defenses discussed in Section 5.3 are post-silicon HT detection methods. Other post-silicon HT detection methods include: (a) destructive reverse-engineering, which involves de-packaging and delayering the chip, imaging the chip's layers, and using software to stitch together the prepared images, thereby recovering the layout and netlist, which thereafter can be carefully examined to detect the presence of HTs [66], [67]; (b) non-destructive side-channel analysis to expose the HT location, for example using optical circuit analysis [68], electromagnetic emanation (EM) measurements [69], [70], [71], thermal map analysis [72], backscattering [73], and laser probing [74]; and (c) using on-chip monitors, i.e., current sensors [75], thermal sensors [76], and invariance checkers [77], for run-time HT detection.…”