2001
DOI: 10.1007/s002160100800
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Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals

Abstract: The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.

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Cited by 5 publications
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“…The close collaboration between CGL and FCM on the further improvement of VGF growth of GaAs continued until 2003 with a large series of publications . The transfer of this VGF technology to FCM was very successful.…”
Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning
confidence: 99%
“…The close collaboration between CGL and FCM on the further improvement of VGF growth of GaAs continued until 2003 with a large series of publications . The transfer of this VGF technology to FCM was very successful.…”
Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning
confidence: 99%