Spacerless metal-manganite pseudo-spin-valve structure

Abstract

We fabricated pseudo-spin-valves by using La 0.7 Sr 0.3 MnO 3 and Co 33 Fe 67 as ferromagnetic electrodes. A natural interface layer present between metal and manganite layers eliminated the need of depositing any nonmagnetic spacers. The magnetic layers were decoupled from each other, and the structure exhibited a positive magnetoresistive behavior. Direct comparison between magnetic and transport measurements concluded the occurrence of giant magnetoresistive effect in such a spacerless metal-oxide pseudo-spin-valve structure. The results have implications for a simple route to fabricate oxide-based spintronic devices.

Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

“…LSMO films (7.5 nm) were grown on SrTiO 3 (STO) (001) single-crystal substrates, by means of pulsed laser deposition from a stoichiometric target at a substrate temperature of 973 K and an oxygen ambient of 150 mTorr. − Although ultrathin layers allow more prominent tunability, the dead layer (2–4 nm) is known to form in ultrathin films and would not show magnetism . The current LSMO thickness is a compromise for preserving the magnetic properties, while allowing sizable tuning effects.…”