Synchronized spin-valve oscillators may lead to nanosized microwave generators that do not require discrete elements such as capacitors or inductors. Uniformly magnetized oscillators have been synchronized, but offer low power. Gyrating magnetic vortices offer greater power, but vortex synchronization has yet to be demonstrated. Here we find that vortices can interact with each other through the mediation of antivortices, leading to synchronization when they are closely spaced. The synchronization does not require a magnetic field, making the system attractive for electronic device integration. Also, because each vortex is a topological soliton, this work presents a model experimental system for the study of interacting solitons.

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Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the nearband-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO. V

We present a detailed investigation of the electrical properties of epitaxial La 0.7 Sr 0.3 MnO 3 / SrTi 0.98 Nb 0.02 O 3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10 20 cm −3 . Moreover, the junctions show hysteretic current-voltage characteristics.

Magnetic skyrmions are envisioned as ideal candidates as information carriers for future spintronic devices, which have attracted a great deal of attention in recent years. Due to their topological protection, the creation and annihilation of magnetic skyrmions have been a challenging task. Here, we numerically demonstrate that a magnetic skyrmion can be created by chopping a chiral stripe domain with a static uniaxial strain/stress pulse. This mechanism not only provides a method to create skyrmions in magnetic nanostructures but also offers promising routes for designing tunable skyrmionicmechanic devices.

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We report a large negative magnetoresistance in Manganese-substituted Zinc Oxide thin films. This anomalous effect was found to appear in oxygen-deficient films and to increase with the concentration of Manganese. By combining magnetoresistive measurements with magneto-photoluminescence, we demonstrate that the effect can be explained as the result of a magnetically induced transition from hopping to band conduction where the activation energy is caused by the sp-d exchange interaction.

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