Space-charge recombination currents and their influence on the dc current gain of AlGaAs/GaAs Pnp heterojunction bipolar transistors

Abstract

The effects of Shockley–Read–Hall, Auger, radiative, and intrinsic surface base recombination processes in the emitter-base space-charge region on the current gain of Pnp AlGaAs/GaAs heterojunction bipolar transistors are analyzed. At low forward emitter-base bias, the current gain of a typical Pnp AlGaAs/GaAs heterojunction bipolar transistor is shown to be reduced substantially below its value calculated while neglecting recombination currents in the emitter-base space-charge region. Excellent agreement between theory and experiment is found for the current gain variation versus collector current density for a Pnp device recently reported by Slater et al. [IEEE Electron Device Lett. 15, 91 (1994)].

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

“…While modeling of HBT performance has been ongoing in InP/InGaAs, AIGaAs/GaAs or GaN-based systems [11][12][13], there has been no attempt at simulating HBT's in this pioneering material. In this work, we report on the simulation results of the InGaAsN-based HBTs with an emphasis on the challenging Pnp for use in assessing the factors maximizing device performances and in providing trends for the epitaxial multilayer structure to further extend the effectiveness of complementary HBT technology.…”