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Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V~~) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, RON, was 6mQ.cm2 and 0.8Llcmz, respectively, producing figure-of-merit values for (VRB)2/RoN in the range 5-48 MW.cm-2. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of thk contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates.On-state voltages were 3.5V for the 550V diodes and 215 for the 2kV diodes. Reverse recovery times were <0.2ysec for devices switched from a forward current density of -500A.cm-2 to a reverse bias of 100V. DISCLAIMER

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A brief review is given of recent progress in fabrication of high voltage GaN and AIGaN rectifiers. GaN/AIGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.