Space Charge–Limited Current Model for Polymers

Моиз, С. А.; Khan, Iqbal A.; Younis, Waheed A.; Karimov, Khasan S.

doi:10.5772/63527

Cited by 38 publications

(39 citation statements)

References 98 publications

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“…To further investigate the likely switching mechanism of the Cu/PEPC-TCNQ/Ag device, the ln(current) vs. ln(voltage) characteristics were further explored. Four well-defined charge transport regions were found as follows: (1) ohmic region; (2) trapped space charge region; (3) trapped filled voltage region (VTFL); and (4) trap-free space charge region [ 31 , 32 , 33 ], as shown in Figure 4 . At an early stage, the devices follow ohmic response, leading to the trapped space charge limited current.…”

Section: Resultsmentioning

confidence: 99%

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

Alahmadi

Karimov

2021

Polymers

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Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping of charge transfer complexes 7,7,8,8-tetra-cyanoquino-dimethane (TCNQ), was investigated. From the current–voltage characteristics, it was found that PEPC shows memory switching effects in both cases (with or without the TCNQ complex). However, in the presence of TCNQ, the PEPC performs faster memory switching at relatively lower voltage and, therefore, a higher ON and OFF ratio (ION/IOFF ~ 100) was observed. The outcome of this study may help to further understand the memory switching effects of conducting polymer.

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Section: Resultsmentioning

confidence: 99%

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

Alahmadi

Karimov

2021

Polymers

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“…Many scientists are hopeful that the polymer-SiNW hybrid solar cell may be the best choice for the next generation solar cell [23][24][25][26]. Polymer semiconductor has many advantages which are highly suitable for solar cell applications [27][28][29][30]. The processing of polymer solar cells is simple, cheap and at a very low temperature (even at room temperature) which makes it appropriate for mass production.…”

Section: Introductionmentioning

confidence: 99%

Design of Silicon Nanowire Array for PEDOT:PSS-Silicon Nanowire-Based Hybrid Solar Cell

2020

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Among various photovoltaic devices, the poly 3, 4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS) and silicon nanowire (SiNW)-based hybrid solar cell is getting momentum for the next generation solar cell. Although, the power-conversion efficiency of the PEDOT:PSS–SiNW hybrid solar cell has already been reported above 13% by many researchers, it is still at a primitive stage and requires comprehensive research and developments. When SiNWs interact with conjugate polymer PEDOT:PSS, the various aspects of SiNW array are required to optimize for high efficiency hybrid solar cell. Therefore, the designing of silicon nanowire (SiNW) array is a crucial aspect for an efficient PEDOT:PSS–SiNW hybrid solar cell, where PEDOT:PSS plays a role as a conductor with an transparent optical window just-like as metal-semiconductor Schottky solar cell. This short review mainly focuses on the current research trends for the general, electrical, optical and photovoltaic design issues associated with SiNW array for PEDOT:PSS–SiNW hybrid solar cells. The foremost features including the morphology, surface traps, doping of SiNW, which limit the efficiency of the PEDOT:PSS–SiNW hybrid solar cell, will be addressed and reviewed. Finally, the SiNW design issues for boosting up the fill-factor, short-circuit current and open-circuit voltage will be highlighted and discussed.

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“…The effect of perovskite thickness on detector performance was studied by analyzing carrier mobility. The carrier mobility was determined using the space-charge-limited-current (SCLC) method in the dark [31], and using the modified Mott-Gurney equation, as shown below:…”

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confidence: 99%

Characteristics of a Hybrid Detector Combined with a Perovskite Active Layer for Indirect X-ray Detection

Liu

Lee

Kang

2020

Sensors

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In this study, we investigated the characteristics of an organic-inorganic hybrid indirect-type X-ray detector with a CH3NH3PbI3 (MAPbI3) perovskite active layer. A layer with a thickness of 192 nm annealed at 100 °C showed higher absorption, higher crystallinity, and lower surface roughness than did perovskite layers made under different conditions. In the indirect X-ray detector, a scintillator coupled with the detector to convert X-ray photons to visible photons, and the converted photons were absorbed by the active layer to generate charge carriers. The detector with the optimized MAPbI3 (192 nm thick and 100 °C annealing condition) active layer was coupled with a CsI(Tl) scintillator which consisted of 400 μm thick CsI and 0.5 mm thick Al, and achieved the highest sensitivity, i.e., 2.84 mA/Gy·cm2. In addition, the highest short-circuit current density (JSC), i.e., 18.78 mA/cm2, and the highest mobility, i.e., 2.83 × 10−4 cm2/V·s, were obtained from the same detector without the CsI(Tl) scintillator.

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Space Charge–Limited Current Model for Polymers

Cited by 38 publications

References 98 publications

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

Design of Silicon Nanowire Array for PEDOT:PSS-Silicon Nanowire-Based Hybrid Solar Cell

Characteristics of a Hybrid Detector Combined with a Perovskite Active Layer for Indirect X-ray Detection

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