Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Okumura, Y.; Shirahata, Masayoshi; Hachisuka, A.; Okudaira, T.; Arima, Hideaki; Matsukawa, T.

doi:10.1109/16.163453

Cited by 27 publications

(7 citation statements)

References 11 publications

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“…Depending on the biasing conditions, the lengths of the two regions are determined and the drain current is analytically obtained as a function of the device and circuit parameters. Fig.4 shows the calculated GBGC MOSFET drain current against the gate voltage compared with the experimental results obtained for both the conventional and the Non-Uniformly Doped Channel (NUDC) MOSFET [30]. From this figure, it is noted that the GBGC MOSFET has a higher drain current than that obtained from both conventional and NUDC MOSFETs at the same biasing.…”

Section: Electrical Characteristics Of Gdgc Mosfetmentioning

confidence: 73%

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Abou‐Elnour

2004

SPIE Proceedings

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A novel graded band gap channel Si-SiGe MOSFET structure has been suggested and its characteristics has been investigated. The investigations indicated that the suggested structure reduces the short-channel effects, increases the cutoff frequency, and hence makes it usage at high frequency and Low noise applications prefeable. To show the superior performance of the suggested structure at GHz frequencies, and as an example, the noise behavior of the structure is thoroughly investigated. First the device noise model parameters are calculated from D.C. and A.C. characteristics. The extracted noise model parameters are then used to determine the minimum noise figure and minimum noise temperature at GHz frequencies. The effects of the different device parameters on the noise performance are determined. Finally, the results are compared with those of conventional MOSFET structure to show the superior performance of graded band gap Si-SiGe MOSFETs at these frequency ranges.

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Section: Electrical Characteristics Of Gdgc Mosfetmentioning

confidence: 73%

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Abou‐Elnour

2004

SPIE Proceedings

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“…Hence there is a demand of introducing advanced technologies, novel structures and new materials to fulfil the demand of today's electronic industry and make the MOSFETs suitable for ultra-large-scale integration. Multigate FET (MUGFET) has been proposed in literature where the channel is more electro statically controlled by the gates [2][3][4][5][6] . A junctionless transistor has been proposed in literature as an alternative candidate to overcome the problem associated with thermal budget in the formation of steep S/D junction [7][8] .Mobility degradation in heaviliy doped channel of JL MOSFET results in lower ON state current and transconductance [9,10] .…”

Section: Introductionmentioning

confidence: 99%

Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

Misra¹,

Biswal²,

Baral³

et al. 2021

Preprint

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This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the potential, electric field, and velocity of carriers, energy band along the channel is investigated systematically. The present work mainly emphasises on the superior performance of SJLGC MOSFET by showing higher drain current (ID) , transconductance (gm) ,cut off frequency (fT) , maximum frequency of oscillation (fmax) , critical frequency (fK) .The drain current is improved by 10.03 % in SJLGC MOSFET due to the impact of grading the channel. There is an improvement in fT, fmax, fK by 45%, 29% and 18% respectively in SJLGC MOSFET showing better RF Performance. The dominance of the SJLGC MOSFET over SJL MOSFET is further elucidated by showing 74% improvement in intrinsic voltage gain (gm / gds) indicating its better applications in sub threshold region. But the transconductance generation factor of SJLGC MOSFET is less than SJL MOSFET in the subthreshold region. The intrinsic gate delay (ζD) of SJLGC MOSFET is less in comparison to SJL MOSFET due to the impact of lower gate to gate capacitance (CGG) suggesting better digital switching applications. The simulation results reveal that SJLGC MOSFET can be a competitive contender for the coming generation of RF circuits covering a broad range of operating frequencies in RF spectrum.

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“…Strategies for mitigating short channel effects can also be found in CMOS technology, but the approach consists of modifying the channel's edges and not of modifying the contacts. [21][22][23] Here, we suggest a new strategy which we term Double Injection Function (DIF) source electrode. The new source electrode design allows high ON current while reducing the short channel effects.…”

Section: Introductionmentioning

confidence: 99%

Self-aligned double injection-function contact mitigating short channel effects in sub-micron channels of solution processed indium gallium zinc oxide

Sheleg

Tessler

2021

Preprint

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We propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200nm channel on a non-scaled insulator (100nm SiO2). In this conceptual design, a combination of an ohmic-like injection contact and a high injection-barrier metal allows maintaining the high ON currents while suppressing the drain-induced barrier lowering. Using an industrial 2D device simulator (Sentaurus), we propose two methods to realize the DIF concept and we use one of them to experimentally demonstrate a DIF-TFT based on solution processed IGZO. Using molybdenum as the ohmic contact and platinum as the high injection barrier, we compare three transistor’s source-contacts: ohmic, Schottky, and double injection function. The fabricated DIF-TFT exhibits saturation at sub 1V drain bias with only about a factor of 2 loss in ON current compared to the ohmic contact.

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Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Cited by 27 publications

References 11 publications

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Modeling of noise behavior of graded bandgap channel MOSFET at GHz frequencies

Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

Self-aligned double injection-function contact mitigating short channel effects in sub-micron channels of solution processed indium gallium zinc oxide

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