Source-gated transistors in hydrogenated amorphous silicon

Shannon, John M.; Gerstner, Ed

doi:10.1016/j.sse.2004.02.004

Cited by 58 publications

(114 citation statements)

References 9 publications

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“…In general, the SGT has a higher output impedance and a lower saturation voltage than a geometrically identical thin-film FET (TFT) [1][2][3]. It therefore should perform well in analog circuits where high amplification and low power consumption is a prerequisite.…”

Section: Introductionmentioning

confidence: 99%

Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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-A physical description for low-field behavior of a Schottky source-gated transistor (SGT) is outlined where carriers crossing the source barrier by thermionic emission are restricted by JFET action in the pinch-off region at the drain end of the source. This mode of operation leads to transistor characteristics with low saturation voltage and high output impedance without the need for field relief at the edge of the Schottky source barrier and explains many characteristics of the SGT observed experimentally. Two-dimensional device simulations with and without barrier lowering due to the Schottky effect show that transistors can be designed so that the current is independent of source length and thickness variations in the semiconductor. This feature, together with the fact that the current in an SGT is independent of source-drain separation, hypothesizes the fabrication of uniform current sources and other large-area analog circuit blocks with repeatable performance even in imprecise technologies such as high-speed printing.

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Section: Introductionmentioning

confidence: 99%

Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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“…In this condition, the drain current is saturated, as any further increase in V D is dropped across the depleted region and has little effect on the field and voltage distribution at the source barrier 2,4 .…”

Section: A Schottky Barrier Source-gated Transistors (Sb-sgts)mentioning

confidence: 99%

“…Regardless of the current injection mechanism at the source 3,5,6 , the intentional use of a source barrier in an otherwise conventional TFT structure leads to major differences in the transistor (output) characteristic: low-voltage saturation 2,3,[7][8][9][10] , flat saturated output characteristics 3,7,9,11 , tolerance to geometrical variations 4,12 , bias stress stability 13 and improved current levels in low mobility materials 14 . Both digital 15 and analog applications 14,[16][17][18][19] could benefit from using these devices, in terms of amplification, energy efficiency, uniformity of electrical performance, and reliability.…”

Section: A Schottky Barrier Source-gated Transistors (Sb-sgts)mentioning

confidence: 99%

Temperature dependence of the current in Schottky-barrier source-gated transistors

Sporea

Overy

Shannon

et al. 2015

Journal of Applied Physics

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The temperature dependence of the drain current is an important parameter in thin-film transistors. In this paper, we propose that in source-gated transistors (SGTs), this temperature dependence can be controlled and tuned by varying the length of the source electrode. SGTs comprise a reverse biased potential barrier at the source which controls the current. As a result, a large activation energy for the drain current may be present which, although useful in specific temperature sensing applications, is in general deleterious in many circuit functions. With support from numerical simulations with Silvaco Atlas, we describe how increasing the length of the source electrode can be used to reduce the activation energy of SGT drain current, while maintaining the defining characteristics of SGTs: low saturation voltage, high output impedance in saturation and tolerance to geometry variations. In this study we apply the dual current injection modes to obtain drain currents with high and low activation energies and propose mechanisms for their exploitation in future large-area integrated circuit designs.

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“…Most of the SGT current flows at the periphery of the source barrier opposite to the drain [8]. Details of the operation of the SGT have been described previously [6][7][8][9].…”

Section: Operation Of Source-gated Transistormentioning

confidence: 99%

“…In addition, the geometry of the SGT leads to a much smaller susceptibility to short-channel effects and a higher output impedance because the source barrier is screened from the drain field by the gate [9]. What is interesting in the context of our requirements for high-performance transistors in low mobility organic semiconductors is that there are high fields sweeping the carriers away toward the drain.…”

Section: Operation Of Source-gated Transistormentioning

confidence: 99%

High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications

Guo

Balon

Hatton

et al. 2008

2008 Flexible Electronics and Displays Conference and Exhibition

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In conventional organic field-effect transistors (OFETs), the low mobility of carriers in the organic semiconductor layers leads to low device speed, which seriously limits the applicability of the devices for analog and high frequency circuits in high performance applications. In this paper, the sourcegated transistor (SGT) concept is introduced for high performance transistors in low mobility organic semiconductors, in which the source comprises a potential barrier to current flow and a gate is used to modulate the electric field at the reverse-biased source barrier and change the current. Compared to the OFET, the OSGT has a much smaller susceptibility to short-channel effects, and can be operated with much higher internal electrical fields giving high drive current and high speed. The numerical simulation results show that the OSGT can be an excellent candidate for designing high performance transistors in low-mobility organic materials for analog and high frequency applications.

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Source-gated transistors in hydrogenated amorphous silicon

Cited by 58 publications

References 9 publications

Low-Field Behavior of Source-Gated Transistors

Low-Field Behavior of Source-Gated Transistors

Temperature dependence of the current in Schottky-barrier source-gated transistors

High Performance Transistors in Low Mobility Organic Semiconductors for Analog and High-Frequency Applications

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