Temperature dependence of the current in Schottky-barrier source-gated transistors

Sporea, Radu A.; Overy, M.; Shannon, John M.; Silva, S. Ravi P.

doi:10.1063/1.4921114

Cited by 19 publications

(28 citation statements)

References 22 publications

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“…6a ), it is reasonable to conclude that the present device operates in the low-field SGT mode. It has been shown, both by experimental and simulation work 44 45 , a device operating under low-field regime has advantage of having lower activation energy (low temperature dependence) while maintaining the obvious advantages of SGTs such as low saturation voltage and high output impedance in saturation.…”

Section: Discussionmentioning

confidence: 99%

Single-crystalline ZnO sheet Source-Gated Transistors

Dahiya

Opoku

Sporea

et al. 2016

Sci Rep

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Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (IDSSAT) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial.

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Section: Discussionmentioning

confidence: 99%

Single-crystalline ZnO sheet Source-Gated Transistors

Dahiya

Opoku

Sporea

et al. 2016

Sci Rep

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“…The recently-described method 79 of lowering the overall temperature coefficient of SGT drain current by increasing the source length, S , was applied to the simulated structure. Current from the “bulk” of the source has a lower temperature dependence than that injected at the edge of the source closest to the drain.…”

Section: Resultsmentioning

confidence: 99%

Self-Heating Effects In Polysilicon Source Gated Transistors

Sporea

Burridge

Silva

2015

Sci Rep

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Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs.

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“…The voltage between the tip and the surface is equal to the contact potential difference (CPD), which is related to the difference between the work functions of two surfaces. Thus, the local electronic properties can be given by

Δ ϕ = W_{t i p} - W_{s a m p l e} = e ϕ = e V_{C P D},

where e is the elementary charge: e = 1.6 × 10 −19 C.…”

Section: Resultsmentioning

confidence: 99%

Influence of electronic transmission on the electrical transport properties in metal–semiconductor contacts

Dai

Liu

Han

et al. 2015

Physica Status Solidi (a)

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A Pt/Si Schottky diode was prepared by depositing thin-film Pt on Si (100) via RF magnetron sputtering. The I-V characteristics of the nano-Schottky structure were measured by conductive-AFM (CAFM) and probe-based measurement, where nano-and micro-size tip was used, respectively. Result from both measurements showed the rectifying behaviors, whereas the leakage current detected by CAFM is about six orders of magnitude larger than that detected by the micromeasurement. It was proposed that this electronic transport discrepancy is mainly ascribed to the different electronic transmission. In order to reveal the characteristics of the Schottky junction, a thermionic emission (TE) model and thermionic-field emission (TFE) model were applied for the I-V data fitting. It was proved that the result can be well fitted by the TE model, with an ideality factor (IF) n ¼ 1-2 and barrier height (BH) 0.75-0.85 eV, indicating this Schottky diode approximates to an ideal Schottky diode (n ¼ 1).

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Temperature dependence of the current in Schottky-barrier source-gated transistors

Cited by 19 publications

References 22 publications

Single-crystalline ZnO sheet Source-Gated Transistors

Single-crystalline ZnO sheet Source-Gated Transistors

Self-Heating Effects In Polysilicon Source Gated Transistors

Influence of electronic transmission on the electrical transport properties in metal–semiconductor contacts

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