Source—Drain contact resistance in CMOS with self-aligned TiSi<sub>2</sub>

Taur, Yuan; Sun, J.Y.-C.; Moy, D.; Wang, L.K.; Davari, B.; Klepner, S.P.; Ting, C. Y.

doi:10.1109/t-ed.1987.22965

Cited by 56 publications

(10 citation statements)

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“…SUPREM III predicted a surface concentration greater than 102~ cm-3; however, the silicon consumption during the titanium silicide formation ceuld modify the interfacial doping concentration of the n § region (10). Taur et al (8) reported a specific contact resistivity of 1.8 • 10 -6 ~-cm 2 for an interracial doping concentration of 3 • 10 ~9 cm -3, which is similar to the observed specific contact resistivity to n + diffusion in Table II. This suggests that the interfacial doping concentration of the n + diffusion is in the low 10 ~9 cm -~ range due to the segregation and/or redistribution of As ions in the titanium silicide layer during the silicide deposition (10).…”

Section: Resultssupporting

confidence: 52%

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Ilderem

Reif

1989

J. Electrochem. Soc.

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We report for the first time the effects of very low pressure chemical vapor deposited (VLPCVD) titanium silicide on device electrical characteristics. The compatibility of this material for VLSI technology is examined through careful characterization of the shallow junction and gate oxide integrities, sheet resistance, and contact resistivity. It is shown that the integrity of the shallow junctions is preserved if the silicon consumption during the silicide deposition is controlled. If this consumption is not controlled, a Schottky diode behavior is observed for the source/drain junctions. It is shown that titanium silicide lowers the specific contact resistivity of metal/source-drain and metal/polysilicon structures by an order of magnitude and a factor of 4-5, respectively. The sheet resistance of the doped polysilicon (gate conductor) is reduced by more than two orders of magnitude through using a TiSi2/polysilicon structure. In addition, it is shown that VLPCVD titanium silicide has no significant effect on the quality of the gate oxide. Slightly lower breakdown voltages for the TiSi2/ polysilicon capacitors are measured, which could be due to the stress induced by siliciding the gate. The results presented in this paper indicate the suitability of VLPCVD titanium silicide films for high quality device fabrication.ABSTRACT A mechanistic study of oxide deposition from silane and nitrous oxide between 495~ and 690~ was performed in a laminar flow, cool wall reactor. Results indicated the existence of two distinct chemical pathways. At high nitrous oxide concentrations, the deposition reaction is dominated by radical chain chemistry initiated by the decomposition of N20. At lovcer N20 concentrations, the decomposition of siIane to form silylene (SiH~) initiates the deposition. Studies of the reaction of disilane and nitrous oxide confirmed the role of Sill2 in the deposition. Reactions involving Sill2 are used to explain the observed growth of sub-stoiehiometric oxides under low N20 conditions. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-06-06 to IP

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Section: Resultssupporting

confidence: 52%

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Ilderem

Reif

1989

J. Electrochem. Soc.

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“…13,14) In addition, the creep-up phenomenon during the formation of TiSi 2 may cause a bridge to form between the gate and the source/drain regions in the device structure, leading to device failure. 15) On the other hand, as the device feature size is scaled down to gate lengths below 40 nm and junction depths below 100 nm, the CoSi 2 process is faced with a difficult challenge on narrow polylines, 16) and high Si consumption during the formation of CoSi 2 silicide becomes a major drawback in forming shallow junctions. 17) Moreover, the formation of CoSi 2 -contacted shallow junctions is sensitive to oxygen in the processing environment, making it necessary to have a more complex silicidation process, such as one including the capping of passivation film during silicidation.…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of NiSi-Silicided n⁺p Shallow Junctions

Wang¹,

Chen²

2006

jjap

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NiSi-silicided n+p shallow junctions are fabricated by P+/F+ dual implantation into/through a thin NiSi silicide layer followed by low-temperature furnace annealing. The incorporation of fluorine atoms in the 61-nm-thick NiSi film retards film agglomeration, making the film stable up to 750 °C for 90 min. A forward ideality factor of 1.08 and a reverse bias current density (at 5 V) of 0.7 nA/cm2 can be attained for the NiSi (61 nm)/n+p junctions with an area of 580×580 µm2 fabricated by P+/F+ dual implantation at 35/30 keV to a dose of 5×1015/5×1015 cm-2 followed by 750 °C thermal annealing. The junction formed is about 71 nm from the NiSi/Si interface. Activation energy measurement shows that the reverse bias area current of the NiSi/n+p junctions is dominated by the diffusion current, while their reverse bias peripheral current is dominated by the minority generation current at room temperature. This implies the presence of generation centers in and/or close to the junction region along the perimeter.

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“…2 ' 3 In the conventional way of preparing the silicide the required for the silicon reaction is consumed from the substrate and the profile is shifted toward the interface as discussed by previous authors. 2 The latter alters not only the junction depth but also the surface concentration of the dopant. This is more important in heavily doped shallow junctions where the profile is flattened near the surface, while it falls abruptly with depth.…”

Section: Resultsmentioning

confidence: 99%

“…However, in the conventional way of forming the silicide, that is by deposition of a titanium layer and further annealing, silicon is consumed from the substrate and consequently, the junction dopant profile is altered. 2 Thus, the junction may fail when it is very shallow (0.1 pLm). Attempts to overcome this problem such as dopant drive-out schemes from the TiSi 2 have not produced satisfactory junction results.…”

Section: Introductionmentioning

confidence: 99%

Low Specific Contact Resistivity Titanium Silicides on n+ and p+ Silicon by Sputter Deposition of Ti/Si Multilayers and Annealing

Revva

Kastanas

Nassiopoulou

1997

J. Electrochem. Soc.

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High-crystalline-quality titanium silicides were formed on n+p and p+n silicon junctions by sputter depositing alternate layers of Ti and Si in a thickness ratio of Si/Ti 2.5 and subsequent annealing at 870'C. Specific contact resistivities to n + silicon as low as 2 x 10 8 D cm 2 were obtained, an order of magnitude lower than those obtained by the conventional single-Ti-layer silicidation process. This is because silicidation by multilayer Ti/Si deposition and annealing does not affect the junction during the process. The silicide/silicon interface is very abrupt. The whole process is less sensitive to the annealing conditions so that a conventional nitrogen (N 2 ) furnace may be used. The sheet resistivity of the film is -22 1Q cm. A pressure limit of 10 6 Torr in the chamber was sufficient for this sputtering process.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.203.227.61 Downloaded on 2015-03-03 to IP ABSTRACT Oxygen nonstoichiometry of Ce 0 Gd 0 ,O,, 9 was gravimetrically measured at temperatures from 700 to 1000°C and oxygen partial pressures between 10-4 and 1 atm. Based on the experimental data, the relationship between log x and log Po~, (where x is the oxygen deficiency and Po, the oxygen partial pressure) is discussed and partial molar enthalpy, AHo , and entropy, ASo, of oxygen are calculated. In the region of x _ 0.04, x is proportional to the -1/4 power of Poo and AHo, and ASO, behave as in an ideal solution, showing that oxygen vacancies are doubly charged and defects in Ce 0 . Gd 01.9are randomly distributed. Thus, the mass action law is satisfied in the area x _ 0.04.

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Source—Drain contact resistance in CMOS with self-aligned TiSi₂

Cited by 56 publications

References 10 publications

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Formation and Characterization of NiSi-Silicided n⁺p Shallow Junctions

Low Specific Contact Resistivity Titanium Silicides on n+ and p+ Silicon by Sputter Deposition of Ti/Si Multilayers and Annealing

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Source—Drain contact resistance in CMOS with self-aligned TiSi2

Cited by 56 publications

References 10 publications

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics

Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

Low Specific Contact Resistivity Titanium Silicides on n+ and p+ Silicon by Sputter Deposition of Ti/Si Multilayers and Annealing

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Product

Resources

About

Source—Drain contact resistance in CMOS with self-aligned TiSi₂

Formation and Characterization of NiSi-Silicided n⁺p Shallow Junctions