Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

Xu, Wenya; Zhao, Jianwen; Qian, Long; Han, Xuan; Wu, Liangzhuan; Wu, Wei-Chen; Song, Minshun; Lu, Zhou; Su, Wenming; Wang, Chao; Nie, Shuai; Cui, Zheng

doi:10.1039/c3nr04870e

Cited by 105 publications

(94 citation statements)

References 53 publications

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“…The advantage of using networks of sc-SWCNTs over aligned nanotubes [52][53][54][55] for the active channel in TFTs is the favorable trade-off between targeted performance and ease of fabrication [56][57][58]. Such TFTs will be useful in low-cost display drivers and logic-circuit elements fabricated using scalable deposition techniques such as dip-coating and ink-jet or gravure printing [59][60][61][62][63][64][65][66]. This work bridges the gap between separation methods that yield high-purity sc-SWCNTs and the available characterization tools for purity assessment, thus providing a framework for device design that considers TFT channel scaling with SWCNT density and purity.…”

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confidence: 98%

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

Ding

Finnie

et al. 2015

Nano Res.

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With recent improvements in carbon nanotube separation methods, the accurate determination of residual metallic carbon nanotubes in a purified nanotube sample is important, particularly for those interested in using semiconducting single-walled carbon nanotubes (SWCNTs) in electronic device applications such as thin-film transistors (TFTs). This work demonstrates that Raman microscopy mapping is a powerful characterization tool for quantifying residual metallic carbon nanotubes present in highly enriched semiconducting nanotube networks. Raman mapping correlates well with absorption spectroscopy, yet it provides greater differentiation in purity. Electrical data from TFTs with channel lengths of 2.5 and 5 μm demonstrate the utility of the method. By comparing samples with nominal purities of 99.0% and 99.8%, a clear differentiation can be made when evaluating the current on/off ratio as a function of channel length, and thus the Raman mapping method provides a means to guide device fabrication by correlating SWCNT network density and purity with TFT channel scaling.As-prepared single-walled corbon nanotube (SWCNT) raw materials contain bundles of nanotubes with a 2:1 semiconducting (sc-) to metallic (m-) ratio and other impurities such as catalysts and amorphous carbon [1][2][3]. For electrical devices, these raw materials must be debundled, purified, and enriched [4][5][6][7][8][9][10][11]. It has been demonstrated that for network thin-film transistors (TFTs), the m-tube content should be less than 2% [3]. For more demanding applications, such as high-frequency logic circuits and display backplanes, the m-tube content should be less than a few ppm given the need for high mobility and high current on/off ratios [12]. In recent years, multiple efforts have led to significant progress in solution-based enrichment techniques, with sc-SWCNT purities in excess of 99% routinely achieved. This leap, however, has now started to reveal the limits of common characterization methods, and other tools are required to provide accurate purity assessment [13,14].Typically, the purity of enriched sc-SWCNTs is Nano Research 2 Nano Res. estimated from the UV absorption spectrum by comparing the peak areas associated with the m-or sc-species [12,[15][16][17]. This method works well for samples whose peaks are well defined and for which background absorption is not dominant. However, as the sc-species purity increases, the features associated with m-tube absorption will gradually disappear and the precise subtraction of the background absorption will dramatically influence the calculated results and introduce uncertainty [18]. As an alternative, we have previously used a different purity metric, denoted as φ, which is based on the ratio of the sc-peak area over the total absorption background from the metallic (M 11 ) and semiconducting (S 22 ) absorption bands [16].Although we presume that φ correlates well with purity for highly pure samples, it does not provide a quantitative assessment. Furthermore, a solution sample is not nece...

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confidence: 98%

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

Ding

Finnie

et al. 2015

Nano Res.

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“…12,13 Recent advances in the post-synthetic sorting and isolation of s-SWCNTs show promise to overcome this challenge. 11,14,15 Density gradient ultracentrifugation, 16 anion exchange chromatography, 17 dextran-based chromatography, 18 polymer wrapping, [19][20][21][22] and two-phase separation 23 have made it possible to isolate s-SWCNTs that are >99% semiconducting. The improved electronic-type purity has made it possible to increase on/off conductance modulation and on-conductance but a trade-off remains because metallic SWCNTs present in these materials are still limiting even at parts per hundred or thousand concentrations.…”

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confidence: 99%

High performance transistors via aligned polyfluorene-sorted carbon nanotubes

Brady

Joo

Roy

et al. 2014

Applied Physics Letters

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We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm−1. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 107 and 46 cm2 V−1 s−1, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm−1 and the on/off ratio is 4 × 105. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

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“…Flexible electronics has attracted considerable research interests in recent years as it exhibits tremendous potential in optoelectronics such as solar cells [1], LCDs [2], OLED lighting [3], and touch screen panels devices [4][5][6]. As a pattern approach, ink-jet printing technique is considered as an excellent alternative candidate to conventional photolithography for fabrication of multifarious conductive patterns on the flexible substrates [7,8].…”

Section: Introductionmentioning

confidence: 99%

Controllable synthesis and sintering of silver nanoparticles for inkjet-printed flexible electronics

Zhang

Zhu

2015

Journal of Alloys and Compounds

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Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

Cited by 105 publications

References 53 publications

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

High performance transistors via aligned polyfluorene-sorted carbon nanotubes

Controllable synthesis and sintering of silver nanoparticles for inkjet-printed flexible electronics

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