Nearly ballistic carbon nanotube array transistors are realized with current densities outmatching conventional semiconductors.

Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 nm h−1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.

Challenges in eliminating metallic from semiconducting single-walled carbon nanotubes (SWCNTs) and in controlling their alignment have limited the development of high-performance SWCNT-based field-effect transistors (FETs). We recently pioneered an approach for depositing aligned arrays of ultra-high-purity semiconducting SWCNTs, isolated using polyfluorene derivatives, called dose-controlled floating evaporative self-assembly. Here, we tailor FETs fabricated from these arrays to achieve on-conductance (G(on)) per width and an on-off ratio (G(on)/G(off)) of 261 μS/μm and 2 × 10(5), respectively, for a channel length (L(ch)) of 240 nm and 116 μS/μm and 1 × 10(6), respectively, for an L(ch) of 1 μm. We demonstrate 1400× greater G(on)/G(off) than SWCNT FETs fabricated by other methods, at comparable G(on) per width of ∼250 μS/μm and 30-100× greater G(on) per width at comparable G(on)/G(off) of 10(5)-10(7). The average G(on) per tube reaches 5.7 ± 1.4 μS at a packing density of 35 tubes/μm for L(ch) in the range 160-240 nm, limited by contact resistance. These gains highlight the promise of using ultra-high-purity semiconducting SWCNTs with controlled alignment for next-generation semiconductor electronics.

Arrays of aligned semiconducting single-walled carbon nanotubes (s-SWCNTs) with exceptional electronic-type purity were deposited at high deposition velocity of 5 mm min(-1) by a novel "dose-controlled, floating evaporative self-assembly" process with excellent control over the placement of stripes and quantity of s-SWCNTs deposited. This approach uses the diffusion of organic solvent on the water-air interface to deposit aligned s-SWCNT (99.9%) tubes on a partially submerged hydrophobic substrate, which is withdrawn vertically from the surface of water. By decoupling the s-SWCNT stripe formation from the evaporation of the bulk solution and by iteratively applying the s-SWCNTs in controlled "doses", we show through polarized Raman studies that the s-SWCNTs are aligned within ±14°, are packed at a density of ∼50 s-SWCNTs μm(-1), and constitute primarily a well-ordered monodispersed layer. The resulting field-effect transistor devices show high performance with a mobility of 38 cm(2) V(-1) s(-1) and on/off ratio of 2.2 × 10(6) at 9 μm channel length.

Conjugated polymers are among the most selective carbon nanotube sorting agents discovered and enable the isolation of ultrahigh purity semiconducting singled-walled carbon nanotubes (s-SWCNTs) from heterogeneous mixtures that contain problematic metallic nanotubes. The strong selectivity though highly desirable for sorting, also leads to irreversible adsorption of the polymer on the s-SWCNTs, limiting their electronic and optoelectronic properties. We demonstrate how changes in polymer backbone rigidity can trigger its release from the nanotube surface. To do so, we choose a model polymer, namely poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,60-(2,20-bipyridine))] (PFO-BPy), which provides ultrahigh selectivity for s-SWCNTs, which are useful specifically for FETs, and has the chemical functionality (BPy) to alter the rigidity using mild chemistry. Upon addition of Re(CO)5Cl to the solution of PFO-BPy wrapped s-SWCNTs, selective chelation with the BPy unit in the copolymer leads to the unwrapping of PFO-BPy. UV-vis, XPS, and Raman spectroscopy studies show that binding of the metal ligand complex to BPy triggers up to 85% removal of the PFO-BPy from arc-discharge s-SWCNTs (diameter = 1.3-1.7 nm) and up to 72% from CoMoCAT s-SWCNTs (diameter = 0.7-0.8 nm). Importantly, Raman studies show that the electronic structure of the s-SWCNTs is preserved through this process. The generalizability of this method is demonstrated with two other transition metal salts. Molecular dynamics simulations support our experimental findings that the complexation of BPy with Re(CO)5Cl in the PFO-BPy backbone induces a dramatic conformational change that leads to a dynamic unwrapping of the polymer off the nanotube yielding pristine s-SWCNTs.