In a continuous crystallizer operating at steady state, it is generally believed that crystal growth takes place in three steps (7). First, the solute being crystallized must diffuse from the bulk of the solution to the solid-liquid interface of the crystal. Second, at the interface a surface reaction occurs during which the solute becomes a part of the crystal lattice and heat of crystallization is liberated. Finally, the liberated heat must diffuse back to the bulk of the solution. Very little attention in the literature has been given the third step, and its effects on the overall process of crystallization are probably small in most systems, exhibiting relatively low heats of crystallization. The relative order of the first two steps has an important effect on the overall crystal growth rate.In most crystallization systems the solute diffusion resistance is less than the resistance offered b the surface tion made is that McCabe's AL law holds ( 1 ) . This law states that geometrically similar crystals of the same material suspended in the same solution grow at the same linear rate. If crystallization is truly a surface area-dependent reaction, with all resistance concentrated at the surface, then McCabe's AL law can be deduced from the following physical assumptions: (1) growth rate is a function only of supersaturation, (2) solubility differences due to crystal size are negligible, and (3) crystals remain geometrically similar with Growth rate r is here de ned as the rate of increase in length L of geometrically corresponding distances on the crystals. Thus For many systems where crystallization from solution occurs (1 to 3 ) , McCabe's AL law has been found to fit the experimental laboratory data well. For these systems, the diffusion resistance is probably less than the resistance due to the surface reaction, so that the rate of integration of the solute molecules into the crystal lattice determines the overall crystal growth rate. Since the solute molecules are believed to be added to the lattice much like building blocks, the growth rate as defined above should logically be essentially constant with increasing crystal size. In many industrial crystallizers that are well mixed, that is, approach closely the back-mixed or the MSMPR' concept ( 4 ) , the AL law has been found to hold as well.In a number of systems it has been observed that reaction. For these systems a common simpli Y ying assumprwth. growth rate actually increases with increasing crystal size ( 5 to 7). Most of these systems that violate the AL law have been highly hydrated crystals such as CuS04.5H20, MgS04.7Hz0, and Na2S04.10HzO. A diffusion mechanism can be postulated to account for violation of the AL law in such heavily hydrated systems where both the water molecules and the solute ions must diffuse to the solid-liquid interface before being integrated in the crystal lattice. For these systems, diffusion resistance plays a large part in determining overall reaction rate. In a mixed suspension, as the crystals grow larger, the slip velo...