2015
DOI: 10.1007/s10854-015-3053-9
|View full text |Cite
|
Sign up to set email alerts
|

Some physical investigations on In-doped ZnO films prepared by RF magnetron sputtering using powder compacted target

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
3
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 35 publications
0
3
0
Order By: Relevance
“…At the same time, the nonmonotonic nature of the change in the optical gap for the ZnO-Me 2 O 3 system (Me = Al, Sc, Y and In), depending on the content of impurity oxide to the host ZnO, was observed by other authors [27,31]. The observed band gap narrowing in the ZIO films deposited from targets with In 2 O 3 content above 2.5 mol% is associated with the formation of a band tail in the band gap with an increase in the carrier concentration [31,32], or, conversely, due to a possible decrease in the carrier concentration related with a high probability of the formation of charged acceptor complexes (V 2− Zn -In + Zn ) [33]. In confirmation of the above, as shown by measurements of electrical characteristics, the surface resistance R S decreases with an increase in the content of In 2 O 3 to 5.0 mol%, and then slightly increases at 10 mol% (Figure 3b).…”
Section: Resultsmentioning
confidence: 56%
“…At the same time, the nonmonotonic nature of the change in the optical gap for the ZnO-Me 2 O 3 system (Me = Al, Sc, Y and In), depending on the content of impurity oxide to the host ZnO, was observed by other authors [27,31]. The observed band gap narrowing in the ZIO films deposited from targets with In 2 O 3 content above 2.5 mol% is associated with the formation of a band tail in the band gap with an increase in the carrier concentration [31,32], or, conversely, due to a possible decrease in the carrier concentration related with a high probability of the formation of charged acceptor complexes (V 2− Zn -In + Zn ) [33]. In confirmation of the above, as shown by measurements of electrical characteristics, the surface resistance R S decreases with an increase in the content of In 2 O 3 to 5.0 mol%, and then slightly increases at 10 mol% (Figure 3b).…”
Section: Resultsmentioning
confidence: 56%
“…Even if the thickness of b‐CNF substrates is increased to 50 µm, the optical transmittance is still over 80% in the wavelength range between 400 and 800 nm. In addition, transparent conductive indium zinc oxide (IZO) as the electrode is sputtered onto the b‐CNF substrate with the thickness of 9 µm . With increasing thickness of the transparent conductive oxide film, the light transmittance and the conductivity declines and improves, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…In this case, larger grains will be expected because hosted atoms with larger size replace the Zn atoms in the lattice. Additionally, some researchers mentioned that the morphology of the samples varies because of particle agglomeration due to indium content and therefore bigger particles were obtained [32,35,36,39,52].…”
mentioning
confidence: 99%