Some Optical Properties of Group II‐VI Semiconductors (I)

Reynolds, D. C.; Litton, C. W.; Collins, T. C.

doi:10.1002/pssb.19650090302

Cited by 67 publications

(6 citation statements)

References 33 publications

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“…Oxides like ZnO are used in nano medicines [7]. Recently there have been a lot of studies on the elastic, electronic and optical properties of some II-VI group semiconductors [4,[8][9][10][11][12][13][14][15][16][17][18][19]. III-V group of semiconductors also exhibit tetrahedral structures and have interesting applications in optoelectronics and photovoltaics because of their direct band gaps and high refractive indices.…”

Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of some semiconductors from energy gaps

Tripathy

Pattanaik

2016

Optical Materials

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II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap.

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Section: Introductionmentioning

confidence: 99%

Optical and electronic properties of some semiconductors from energy gaps

Tripathy

Pattanaik

2016

Optical Materials

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“…It can be seen that the red shift and broadening of the Raman peak at about 439 cm 1 increase with increase in Sb doping level. Compared with bulk ZnO material, the peak at about 439 cm 1 of the sample with 2.15% Sb doping is red shifted by about 6 cm 1 and the full width at half-maximum is broadened by about 15 cm 1 peaks with Sb doping level more directly. With increasing Sb doping content, the intensity of the peak at 528 cm 1 increases gradually and the peak at 580 cm 1 is red shifted at the same time.…”

Section: Experimental and Resultsmentioning

confidence: 94%

“…1,2 Many investigations made on these crystals have utilized nearly every available experimental and theoretical technique. ZnO is a wide-bandgap material and recently has been recognized to have potential for optoelectonic applications.…”

Section: Introductionmentioning

confidence: 99%

Sb‐induced size effects in ZnO nanocrystallites

Zuo

Zhang

et al. 2001

J Raman Spectroscopy

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Sb-doped ZnO nanocrystallites of average grain size about 10 nm were made by using the citrate method. Raman spectra of the Sb-doped ZnO nanocrystallites at room temperature are reported. Shifts and broadening of the Raman peak with Sb increasing content were observed and it was found that the intensity of a new Raman peak increased at the same time. These effects are similar to finite size effects in ZnO nanocrystallites. It was found for the first time that the size effects are induced by the presence of Sb in the matrix.

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“…With a band gap of 1.840 eV for CdSe at low temperatures, 46 1.10±0.05 eV could imply a level in a distance of 0.74db0.05 eV from one of the energy bands if a simple Schon-Klasens or Lambe-Klick type of transition is involved. In case of an isolated cadmium defect this could be a level of a cadmium vacancy or a cadmium interstitial.…”

Section: B Radiation-damage Experimentsmentioning

confidence: 99%

Electron Radiation Damage in Cadmium-Selenide Crystals at Liquid-Helium Temperature

Schulz

Kulp

1967

Phys. Rev.

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CdSe crystals grown by the vapor-deposition method show a cathodoluminescence spectrum at 5°K with peaks at 1.34 and 1.74 eV. Under electron bombardment, above an energy threshold of 320 keV, a new emission band at about 1.1 eV is produced. An isochronal annealing experiment shows the annihilation of the damage in one step at 62°K. Previous experiments at 77°K showed a threshold at 250 keV for the generation of a fluorescence band at 0.99 eV. The threshold observed at 320 keV is assigned to the displacement of a cadmium atom with an energy transferred of 8.1 eV. The threshold at 250 keVis assigned to the displacement of the selenium atom with an energy transferred of 8.6 eV.

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Some Optical Properties of Group II‐VI Semiconductors (I)

Cited by 67 publications

References 33 publications

Optical and electronic properties of some semiconductors from energy gaps

Optical and electronic properties of some semiconductors from energy gaps

Sb‐induced size effects in ZnO nanocrystallites

Electron Radiation Damage in Cadmium-Selenide Crystals at Liquid-Helium Temperature

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