Some new results in porous silicon

Abstract

Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested.

Enhanced photo luminescence from porous silicon on texturized surface

“…A typical SEM picture of porous silicon on textured surface is shown in figure 1. It is seen that the surface consists of micro-particles with the diameters in the range 5-20 nm (Nobuaki and Suemune 1993;Jain et al 1994).…”

Mechanism and control of formation of porous silicon onp-type Si

“…The specific structure of PS depends on various parameters like doping type and level of c-Si, HF concentration, formation current density, presence of illumination, surface morphology etc (Smith and Collins 1992). Depending upon the various parameters during formation, PS may be looked upon as either quantum wires or quantum sponges (Koshida et al 1992;Marusak et al 1993;Feng and Tsu 1994b;Jain et al 1994;Kocka et al 1996).…”