A comparison of the properties of porous silicon formed on polished and textured (100) Si: High resolution XRD and PL studies

Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts

“…4(c) shows its amplified view. As confirmed from our earlier studies [3], the peak at lower angle with respect to the substrate peak position indicates that the perpendicular lattice constant of the PS film is more than that of the substrate. The strain (∆a/a) normal to the interface due to this lattice mismatch can be obtained from Bragg equation in its differential form given by, ∆a/a = -cotθ B ∆θ (1) where, ∆θ is the angular separation between film and substrate peaks and θ B being the Bragg diffraction angle.…”

“…The anodization was carried out at (I d ) ~20 to 60 mA cm -2 for a fixed anodization time of 30 mins. The details of the contact formation & characterization techniques can be found elsewhere [3].…”

Effect of necking on Czochralski-grown LiF crystals and its influence on crystalline perfection and the correlated physical properties

“…Porous silicon (PS) is a good example in which the surface, which contains pores distributed homogeneously with high density and up to a good depth (of the order of micrometres), acts as if it has a larger lattice constant. As a result of this enlargement of the lattice constant (Ád/d ' 10 À4 ) by the tensile strain in the PS strands (chemically attached to the silicon substrate) surrounding the pores, the diffraction curve contains an additional resolved peak (Bhagavannarayana et al, 2006). Further changes in Ád/d due to adsorption of suitable gases in the pores could also be measured quantitatively by the change in the separation of the diffraction peaks due to the PS film and the Si substrate (Sharma et al, 2007).…”

On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon

“…A general framework has been established for the poremorphology under varied conditions [26][27][28][29][30][31][32][33][34][35][36][37] . Many properties and various applications of PS have been reported [24] .However, the influence of surface morphology of n-type silicon (n-Si) specimen upon the properties of PS has not been investigated in detail, although similar work has been performed on p-type silicon [38] . For example, under identical etching conditions, the size, density and growth-speed of the pores on unpatterned samples were quite different from those on patterned samples.…”

“…This would also become a basis for finding various applications, e.g. lithographic or non-lithographic photonic crystal fabrication [33][34][35][36][37][38][39][40][41] .First, SCR Model [1][2][3] will be briefly introduced here. As is well known, illuminating the back side of n-type silicon generates electron-hole pairs.…”