Some hydrogen implantation effects in bubble garnets

Gérard, P.; Martin, P.; Delaye, M.T.

doi:10.1063/1.334670

Cited by 10 publications

(1 citation statement)

References 6 publications

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“…GGG can be grown in such a way as to provide excellent single-crystalline quality. Garnets were intensively studied in the 1980s with the aim of developing magnetic bubble devices [1][2][3][4]. Later on, ion implantation was used for doping garnets with various ions to prepare laser materials [5].…”

Section: Introductionmentioning

confidence: 99%

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Szücs

Dézsi

Fetzer

et al. 1998

J. Phys.: Condens. Matter

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Gadolinium gallium garnet single crystals were implanted with doses of ions in the range . Depending on the dose, iron with or charge states was found to have formed after the implantation. After a subsequent annealing in air, the iron oxidized to . The Mössbauer and channelling measurements showed lattice recrystallization taking place at . After recrystallization, the iron was found to have substituted for gallium ions both at the octahedral and at the tetrahedral positions. The relative concentration of the two types of iron at the two sites shifted towards the equilibrium distribution upon high-temperature annealing.

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Section: Introductionmentioning

confidence: 99%

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Szücs

Dézsi

Fetzer

et al. 1998

J. Phys.: Condens. Matter

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Ion implantation in magnetic garnet

Gérard

1987

Nuclear Instruments and Methods in Physics Research Section B:

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Influence of deuterium implantation on bubble garnet properties

Gérard¹,

Capra²,

Magnin³

1985

Journal of Applied Physics

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A classical (Y Sm Lu Ca)3 (Fe Ge)5 O12 bubble garnet, supporting 1.8-μm bubbles, has been implanted with 1.5×1016 D+2 cm2 at 60 keV either directly or through a predeposited 100-Å-thick silica layer. Nuclear techniques such as D (3He, α) p nuclear reaction and Rutherford backscattering combined with channeling measurements were used to determine the implant and damage profiles, respectively. Double-crystal x-ray diffraction was used to measure the maximum strain and magnetic properties were obtained from ferromagnetic resonance. The evolution of these parameters has been studied as a function of annealing treatments. It follows that, as compared to hydrogen, deuterium also interacts at damage-level inducing within the garnet new magnetic phenomena. A higher annealing temperature is required for bubble memory applications. The silica overlayer which is useful for increasing the anisotropy field change, somewhat affects the magnetic properties of the implanted layer.

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Some hydrogen implantation effects in bubble garnets

Cited by 10 publications

References 6 publications

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Iron implantation in gadolinium gallium garnet studied by conversion-electron Mössbauer spectroscopy

Ion implantation in magnetic garnet

Influence of deuterium implantation on bubble garnet properties

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