Ion implantation in magnetic garnet

Gérard, P.

doi:10.1016/s0168-583x(87)80169-6

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…This has been observed for, e.g., A1203 [12,13], CaTiO 3 [12], SrTiO a [12], LiNbO 3 [3], yttria stabilized zirconia (YSZ) [14] and garnets [15]. Oxides with a complex crystal structure, due to, for instance, the ordering of defects, may transform to a simpler crystal structure (randomization) [16].…”

Section: As-implanted Statementioning

confidence: 97%

Structural, electrical and catalytic properties of ion-implanted oxides

Hassel

Burggraaf

1989

Appl. Phys. A

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Abstract. The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides. 66.30, 81.40, 81.60, 61.70 Since the introduction of ion implantation as a surface modification technique, the electrical [1, 2], optical [3], magnetic [4], chemical [5], mechanical [6] and topographical [7] properties of solids have been modified. The potential use of ion implantation to modify the surfaces of ceramic materials has been discussed by Burggraaf et al. [56]. These changes in the macroscopic properties correspond to the changes in chemical composition and microstructure. In this paper this relationship is discussed for the electrical and catalytic properties of oxides, modified by ion implantation. PACS: Ion ImplantationIn the ion-implantation process, specific atoms are ionized, accelerated and mass selected [8]. Those high energetic ions (15 keV-2 MeV) penetrate in the solid and come to rest due to elastic and inelastic energy loss processes. A comprehensive treatment of the penetration of ions in solids has been given in [-9 and 10]. Depending on the process parameters the depth profile can be given different shapes, the penetration depth can be varied between some nanometers and about one micrometer and the dopant concentration in the surface can be raised to about 50 at.%. When the ion beam is properly scanned over the surface, lateral very uniform concentrations of the dopant are obtained. Due to the electrical control of the ion energy and dose, the technique is very reproducible.A major advantage of ion implantation is that a surface layer can be doped with any element, independent of its solubility in the substrate material. This means that one can produce metastable compounds, strongly supersaturated solid solutions and complex microstructures consisting of very finely dispersed precipitates with nanoscale dimensions in a matrix material. Several examples are discussed below. Microstructural Changes As-Implanted StateWhen an ion is implanted, it collides with the nuclei and electrons of the solid. In ionic oxides, only nuclear collisions result in defects [11]. Vacancies and interstitials are generated in both the anion and the cation sublattice. Interstitial loops nucleate and grow during irradiation. The lattice damage initially increases with the dose and finally saturates [11]. At that point as many defects are generated as annihilated by dynamic recovery processes in the solid. Dynamic recovery processes can be suppressed by cooling the target to low temperatures.The accumulation of defects in ion-implanted solids can result in a transition from a crystalline to an amorphous phase. This has been observed for, e.g., A1203 [12,13] [25]. The main conclusion from this model is that Fe 3 + can only exist in MgO as an isolated impurity. The fraction of Fe z + and Fe ~ is determined by the probability that, respectively, two Fe atoms and ...

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Section: As-implanted Statementioning

confidence: 97%

Structural, electrical and catalytic properties of ion-implanted oxides

Hassel

Burggraaf

1989

Appl. Phys. A

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“…Proceeding from the ion crystallographic sites the YIG lattice may be represented in the form fY 3 3 g Fe 3 2 Fe 3 3 , where the brackets f g correspond to the dodecahedral, [ ] to the octahedral and ( ) to the tetrahedral sites of the respective cations [1]. The unit cell of the garnet contains 160 atoms and is very complicated.…”

Section: Theoretical Considerationmentioning

confidence: 99%

“…The unit cell of the garnet contains 160 atoms and is very complicated. The YIG crystalline structure and the spatial arrangement of the different atoms are displayed in [1]. The ferrimagnetic state is formed by Fe 3 ions in two crystallographic nonequivalent sites, i.e.…”

Section: Theoretical Considerationmentioning

confidence: 99%

“…One of the most perspective methods of the surface layer formation of such films assigned in advanced properties is the ion implantation (II), the inculcation of charged particles in the matrix material from an ion beam of high energy during the irradiation. The ion implantation in such a structure in the case of light ions is widely studied (see, for example [1,2,9]) in contrast to the heavy ion implantation, which allows to form very thin surface modified layers, however, which does not find sufficient elucidation in the literature.…”

Section: Introductionmentioning

confidence: 99%

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The Local Magnetic Y3Fe5O12 Structure Implanted by As Ions

Tkachuk

1999

phys. stat. sol. (a)

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The yttrium‐iron garnet (YIG) films implanted with 60 keV As ions over a large dose range are investigated in the present paper. The processes of producing radiation‐induced defects caused by inculcation of heavy ions reveal a number of principal peculiarities. Thus, during the implantation of heavy ions in contrast to light ions we do not observe a correlation between the deformation level of crystalline lattice and the angle β (angle between the magnetization direction and the normal to the film).

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“…The influence of ion implantation into YIG has been studied extensively from such view points [4][5][6][7][8][9]. The research revealed that hydrogen is one of the most efficient dopants to enhance the effective anisotropy field change of YIG films [4,8] and this beneficial effect fades away after annealing in a nitrogen atmosphere [7]. The latter behavior was attributed to out-diffusion of hydrogen from the YIG lattice.…”

Section: Introductionmentioning

confidence: 99%

Local Magnetic Field and Positive Muon Diffusion in Yttrium Iron Garnet

Ito¹,

Higemoto²,

Luetkens³

2014

Proceedings of the International Symposium on Science Explored by Ultra Slow Muon (USM2013)

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We report positive muon spin rotation/relaxation (µ + SR) measurements on undoped yttrium iron garnet below 300 K in a ferrimagnetically ordered state. In zero field µ + SR measurements, static local magnetic fields were detected at 10 K in the range 0.7-1.2 T, which is consistent with the magnitude of the ordered magnetic moment. A gradual increase in a longitudinal muon spin relaxation rate was observed above 200 K with increasing temperature and attributed to thermally activated hopping of muons among magnetically inequivalent sites. The activation energy was estimated to be 0.170 (7) eV.

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Ion implantation in magnetic garnet

Cited by 6 publications

References 19 publications

Structural, electrical and catalytic properties of ion-implanted oxides

Structural, electrical and catalytic properties of ion-implanted oxides

The Local Magnetic Y3Fe5O12 Structure Implanted by As Ions

Local Magnetic Field and Positive Muon Diffusion in Yttrium Iron Garnet

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