Some fundamentals of the vapor and solution growth of ZnSe and ZnO

Triboulet, R.; Ntep, J; Barbé, M.; Lemasson, Ph.; Mora‐Seró, Iván; Muñoz, V.

doi:10.1016/s0022-0248(98)01229-9

Cited by 19 publications

(19 citation statements)

References 14 publications

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“…In particular, the increase of surface atoms in nanostructured ZnO makes it a potential candidate for catalysis and gas sensing applications. [3] A large variety of techniques have been applied to grow ZnO nanostructured thin films including sublimation, [4] pulsed laser deposition (PLD), [5] wet chemical methods, [6] spray pyrolysis (SP), [7] atomic layer deposition (ALD), [8] molecular beam epitaxy (MBE), [9] chemical bath deposition (CBD), [10] sol-gel, [11] electrodeposition, [12] oxidation of zinc films, [13] vapor-phase transport (VPT), [14] and MOCVD. [15] Among them, MOCVD offers several advantages, including the production of high-quality films through a fine tuning of various processing parameters, associated with simpler, economic equipment, easy scalability, and higher throughput as compared to conventional physical vapor deposition (PVD) techniques.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

Scalisi

Toro

Malandrino

et al. 2008

Chemical Vapor Deposition

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A study of the influence of the substrate mismatch on the growth of ZnO nanostructures is reported. ZnO nanostructures are deposited, by a simple catalyst-free metal-organic (MO)CVD approach, onto various substrates, such as SrTiO 3 (100), Si(100), and Al 2 O 3 (0001), using a novel diamine adduct of zinc bis-2 thenoyl-trifluoroacetonate (Zn(tta) 2 Á tmeda, Htta ¼ CF 3 COCH 2-COC 4 H 3 S, tmeda ¼ N,N,N(,N(-tetramethylethylenediamine). Structural characterizations indicate that both morphology and crystalline structure of the obtained ZnO nanostructured systems strongly depend upon the crystalline mismatch with the substrate. Room-temperature cathodoluminescence (CL) spectroscopy is used to characterize the optical properties of the various nanostructures. The resulting cathodoluminescence spectra of all the samples show the presence of a strong and broad green band around 2.4 eV.

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Section: Introductionmentioning

confidence: 99%

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

Scalisi

Toro

Malandrino

et al. 2008

Chemical Vapor Deposition

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“…As regards the growth of ZnO bulk crystals, it has been carried out by different "classical" methods, as flux [4], vapour transport [5,6], hydrothermal [7,8] and solution [9,10], being hydrothermal and vapour transport the most frequently used ones. It has been well established that the growth of ZnO by vapour transport in closed ampoules at moderate temperatures (∼1000°C) and temperature gradients results in very low growth rates in absence of other species [11,12]. We refer them as "additional species" and we can find a good variety in literature: F 2 [13], Cl 2 [5,6,13,14], Br 2 [13,14], I 2 [13], HF [13], HCl [5,[13][14][15], HBr [14,15], HI [15], NH 3 [5], NH 4 Cl [14,15], NH 4 Br [14,15], ZnCl 2 [15,16], HgCl 2 [5,17,19], Zn [16,18], H 2 [5,20,21], C [6,21,23] and different mixtures: H 2 O+H 2 [2,20], H 2 +C+H ...…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

Tena‐Zaera

Martı́nez-Tomás

Gómez‐García

et al. 2006

Cryst. Res. Technol.

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Nowadays, the growth of ZnO by vapor transport in silica ampoules is generally made in presence of graphite. As it has been already shown, this means that the growth process is carried out in presence of a Zn excess. In order to control that and act, as a consequence, on the physical properties of crystals we have performed a systematic study of the growth process in a wide range of Zn excess compositions using well defined experimental conditions. As a preliminary characterization, optical absorption and electrical properties have been analyzed at room temperature. The results show how some physical properties of asgrown ZnO crystals can be changed in a controlled way by an adequate combination of different growth conditions such as graphite covering of inner ampoule walls, thermal difference between source material and crystallization zone and additional gas (composition and pressure). In this frame some post-growth annealing processes can be avoided reducing the time and cost of processes.

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“…Crystal growth from the vapour phase appears as another attractive possibility. It has been well established that the growth of ZnO by vapour transport in closed ampoules at moderate temperatures (∼ 1000 ºC) and temperature gradients results in very low growth rates in absence of additional species [18,19]. Different species, which enhance higher growth rates, have been used in the growth of ZnO by vapour transport.…”

Section: Introductionmentioning

confidence: 99%

A new approach to the growth of ZnO by vapour transport

Muñoz‐Sanjosé

Tena‐Zaera

Martı́nez-Tomás

et al. 2005

phys. stat. sol. (c)

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The crystal growth of ZnO by vapour transport is classically made in presence of additional species which enhance the growth process. Usually, additional species have been considered as chemical transport agents that promote a typical CVT (Chemical Vapour Transport) process. Recently, we have proposed a new interpretation of the chemical role of some of these species. This new interpretation considers that, in some cases, the additional species promote a partial consumption of the O 2 provided by the ZnO decomposition and, consequently, a Zn excess is generated. This excess of Zn pressure activates the ZnO decomposition and the growth rate is enhanced. Among those species, carbon shows an additional beneficial role in the ZnO growth process. The deposition of a graphite layer on the inner walls of the generally used growth silica ampoules avoids the reaction between the ZnO crystals and the silica. In order to gain a further insight into the growth process, the time dependence of the transported mass in presence of graphite has been studied using an in-situ dynamic technique. A systematic study of the mass transport rate dependence on the thermal difference between the source material and the crystallisation zone (∆T) has been made. On the other hand the influence of a residual gas on the transport rate has been also systematically analysed. Two different gases have been used, argon (Ar) and carbon dioxide (CO 2 ). The experiments with Ar have allowed the analysis of the effects of an inert gas on the transport processes. Meanwhile, the experiments with CO 2 have shown its chemical role on the generation of a non-reacted Zn which is necessary to activate the ZnO decomposition. This role paves the way to control the Zn excess during the growth experiments. Thus, CO 2 can be used to act on the off-stoichiometry degree of the ZnO crystals and consequently to control, at least partially, some of the physical properties of this material.

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Some fundamentals of the vapor and solution growth of ZnSe and ZnO

Cited by 19 publications

References 14 publications

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

Growth of ZnO Nanostructures Produced by MOCVD: A Study of the Effect of the Substrate

Growth of ZnO crystals by vapour transport: Some ways to act on physical properties

A new approach to the growth of ZnO by vapour transport

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