Solvothermal Synthesis and Ultrafast Photonics of Black Phosphorus Quantum Dots

Xu, Yanhua; Wang, Zhiteng; Guo, Zhinan; Huang, Hao; Xiao, Qiang; Zhang, Han; Yu, Xue‐Feng

doi:10.1002/adom.201600214

Cited by 336 publications

(106 citation statements)

References 57 publications

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“…The band structure was to be considered in terms of few-layer BP without any quantum confinement effect. The saturation intensity was obtained using the saturation model in our previous work [7] and it was about 300 GW/cm 2 at 1030 nm, much larger than that of BP QDs (only 3.3 GW/cm 2 at 800 nm) but in the same order of magnitude with Xu et al (535.3 GW/cm 2 at 800 nm) and Lu's results (647.7 ± 60 at 800 nm) about BP nanosheets [4,30]. The Q-switching operation of BP saturable absorber has been demonstrated.…”

Section: Resultssupporting

confidence: 61%

“…It can be seen that although the FOM decreases slightly with the size at 1030 nm, it is still in the same order of magnitude with that at 515 nm, indicating that BP is a good broadband saturable absorber. Xu et al prepared the BP quantum dots by solvothermal synthesis and found that the SA property is much better than that of BP nanosheets [30]. The average lateral size of the BP QDs is only about 2.1 ± 0.9 nm, in which the quantum confinement effect might be dominant.…”

Section: Resultsmentioning

confidence: 99%

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Size-dependent saturable absorption and mode-locking of dispersed black phosphorus nanosheets

Zhang

Wang

et al. 2016

Opt. Mater. Express

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Size dependence of the saturable absorption (SA) property for black phosphorus (BP) was investigated. Three types of BP dispersions with different sizes were prepared using the liquid phase exfoliation method. By fitting the Z-scan data with the analytical solution of the propagation equation, the SA coefficients NL α and the imaginary part of the third order optical susceptibility (3) Im χ are compared at two specific wavelengths, one above the bandgap of the BP monolayer at 515 nm and another between the bandgaps of the monolayer and bulk at 1030 nm. A figure of merit (FOM, |Imχ (3) /α 0 |, α 0 linear absorption) was employed to assess the SA performance of the three different dispersions. The FOM, about (2.1 ± 0.3) × 10 −14 esu cm at 515 nm, hardly depends on the size and hence the layer number of the dispersed BP nanosheets, whereas that at 1030 nm decreases from (1.14 ± 0.20) × 10 −14 to (0.50 ± 0.02) × 10 −14 esu cm when the size of the nanosheets becomes smaller. Zhang, G. S. Duesberg, and J. Wang, "Direct observation of degenerate two-photon absorption and its saturation in WS 2 and MoS 2 monolayer and few-layer films," ACS Nano 9(7), 7142-7150 (2015). 26. K. Wang, Y. Feng, C. Chang, J. Zhan, C. Wang, Q. Zhao, J. N. Coleman, L. Zhang, W. J. Blau, and J. Wang, "Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide

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Section: Resultssupporting

confidence: 61%

Section: Resultsmentioning

confidence: 99%

Size-dependent saturable absorption and mode-locking of dispersed black phosphorus nanosheets

Zhang

Wang

et al. 2016

Opt. Mater. Express

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“…SA technology is presently predominated by semiconductor saturable absorber mirrors (SESAMs). [31][32][33] To date, carbon nanotubes (CNTs), [34,35] graphene, [36,37] MoS 2 , [38,39] WS 2 , [40] topological insulators (TIs) [41][42][43][44] and black phosphorus [45][46][47] have been successfully utilized as SA for the realization of mode-locking. Ultrashort pulses can be used in many areas, such as optical communication and spectroscopy.…”

Section: Wwwadvancedsciencenewscom Wwwlpr-journalorgmentioning

confidence: 99%

Few‐layer Bismuthene: Sonochemical Exfoliation, Nonlinear Optics and Applications for Ultrafast Photonics with Enhanced Stability

Liang

et al. 2017

Laser & Photonics Reviews

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331

204

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As the last element in Group VA, bismuthene has garnered substantial interest for its unique electronic and mechanical properties and its enhanced stability. However, the mechanism that drives the light-bismuthene interaction remains completely unclear. Herein, a sonochemical exfoliation approach is employed to deliver a successful synthesis of few-layer bismuthene. The corresponding nonlinear optical response at the visible wavelength is investigated. The nonlinear refractive index is ß10 −6 cm 2 /W and was measured by spatial self-phase modulation. Thanks to its direct energy band-gap at 1550 nm, the saturable absorption property of bismuthene is experimentally illustrated at the telecommunication band with an optical modulation depth of ß2.03% and a saturable intensity of ß30 MW/cm 2 . The optimization of the laser parameters resulted in the generation of an ß652-femtosecond optical pulse centered at 1559.18 nm. This result indicates that the bismuthene-based saturable absorber is indeed a new and excellent material for an ultrafast saturable absorber device. Our work highlights the promise of this material in ultrafast photonics and may be considered as an important step towards bismuthene-based photonics devices (optical modulator, optical switcher, detector, etc.).

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Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

108

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Solvothermal Synthesis and Ultrafast Photonics of Black Phosphorus Quantum Dots

Cited by 336 publications

References 57 publications

Size-dependent saturable absorption and mode-locking of dispersed black phosphorus nanosheets

Size-dependent saturable absorption and mode-locking of dispersed black phosphorus nanosheets

Few‐layer Bismuthene: Sonochemical Exfoliation, Nonlinear Optics and Applications for Ultrafast Photonics with Enhanced Stability

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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