Solvent engineering for efficient inverted perovskite solar cells based on inorganic CsPbI2Br light absorber

Efficient Inorganic Cesium Lead Mixed‐Halide Perovskite Solar Cells Prepared by Flash‐Evaporation Printing

“…The atomic ratios of Cs/Pb, I/Pb, and I/Br were estimated as 1.14, 2.22, and 1.93, respectively, which is in good agreement with the CsPbI 2 Br composition within the allowable error range of EDS measurement. The film also showed a pure cubic phase after annealing as demonstrated by the X‐ray diffraction (XRD) patterns in Figure S3a, Supporting Information, with main diffraction peaks at 14.7°, 20.9°, and 29.6° corresponding to the (100), (110), and (200) planes, respectively . The evaporated CsPbI 2 Br film bandgap was evidenced by the UV–vis absorbance spectra and steady‐state photoluminescence (PL) emission spectra as 1.93 eV (Figure S3b, Supporting Information), close to the reported value of 1.92 eV …”

“…High‐quality perovskite films with good uniformity, flatness, and crystallinity are proved to be essential in achieving high device performance . Currently, most of the studies on cesium lead halide solar cells focus on one‐step spin coating for its low cost and simplicity, whereas solvent and anti‐solvent engineering are still essential to form compact and uniform films. Compared to solution‐based methods, vacuum evaporation provides an effective way to deposit consistently uniform and compact films with high reproducibility.…”

Anorganische CsPbX3‐Perowskit‐Solarzellen: Fortschritte und Perspektiven

“…untersuchten den Einfluss unterschiedlicher Stçchiometrien von CsPbI 2 Br auf die Schichtqualitätu nd Zellleistung. Zhang et al leiteten einen Heißluftstrom über die spinbeschichteten Proben (Lçsungsmittel DMF/DMSO) und erzielten dadurch eine verbesserte Kristallisation resultierend in Zellen mit 11.1 %sPCE und V OC = 1.315 V. [161] Eine weitere Studie befasste sich mit der Optimierung der DMSO-Konzentration in gemischten Lçsungsmitteln und ergab sPCE = 8.8 %u nd V OC = 0.97 V. [162] Nach 500 hB etrieb nahe P max in N 2 (keine UV-Belichtung) wurde ein Rückgang der PCE von unter 10 %festgestellt. Chen et al erhielten sPCE = 11.5 %u nd V OC = 1.13 Vm it sehr geringer Hysterese und hervorragender Stabilitätd er Zelle.…”

“…untersuchten den Einfluss unterschiedlicher Stçchiometrien von CsPbI 2 Br auf die Schichtqualitätu nd Zellleistung. [158] [161] Eine weitere Studie befasste sich mit der Optimierung der DMSO-Konzentration in gemischten Lçsungsmitteln und ergab sPCE = 8.8 %u nd V OC = 0.97 V. [162] Nach 500 hB etrieb nahe P max in N 2 (keine UV-Belichtung) wurde ein Rückgang der PCE von unter 10 %festgestellt. Bai et al fanden, dass die Te mperatur der Vorstufenlçsung den Kristallisationsprozess stark beeinflusst.…”

Low Temperature‐Processed Stable and Efficient Carbon‐Based CsPbI2Br Planar Perovskite Solar Cells by In Situ Passivating Grain Boundary and Trap Density

“…For increasing the CsPbI 2 Br layer thickness, solvent engineering was performed by adopting a second cosolvent, i.e., dimethyl sulfoxide (DMSO), with stronger polarity and coordination ability to increase the solubility of the bromides and the concentration of precursor solution . Using a mixed solvent (DMF:DMSO = 60:40 vol), a thicker CsPbI 2 Br film (≈410 nm) was obtained by Chen's group . They found that enhancing the DMSO proportion in the mixed solvent could further increase the CsPbI 2 Br film thickness, but simultaneously formed vast pinholes and grain boundaries in the active layer due to slow crystallization of perovskite caused by slow evaporation process of DMSO.…”