Solvent Dependence of Vacuum-Dried C<sub>60</sub>Thin-Film Transistors

Kang, Woogun; Kitamura, M.; Kamura, Masakazu; Aomori, Shigeru; Arakawa, Yasuhiko

doi:10.7567/jjap.51.02bk10

Cited by 6 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results may have been facilitated by p-p interactions between the C 60 molecules and the two-dimensional carbon sheet formed by a honeycomb lattice of graphene and phenyl groups in the PTS-SAM. 16,31 In this way, it was possible to fabricate bottomcontact C 60 FETs using spin-coating techniques if the graphene and PTS-SAM were organized as an S/D electrode and a channel modifying layer, respectively. On the other hand, the metal electrodes prepared with aluminum could not be used in solutionprocessed C 60 FETs with a bottom-contact geometry because C 60 molecules were aggregated on the metal electrodes during the spin-coating process, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…13,14 However, the studies on the solution-processable C 60 -based FETs reported to date have focused only on the effects of surface modifications on the insulating layer and solvent dependence of the formation of a stable C 60 thin film, and the electron transfer properties. [15][16][17] As the field progresses, understanding the characteristics of electrode/semiconductor interfaces has become important because the crystallinity of the semiconductor deposited on electrodes may depend on the surface properties of the electrodes in a bottomcontact configuration. Source/drain (S/D) electrodes are typically patterned prior to the deposition of an organic semiconductor layer.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Jeong

Yun

Jang

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced π-π interactions with C60, which facilitated the formation of a C60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C60 semiconductors. We found that thermal annealing of the C60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V(-1) s(-1). This approach enables the realization of solution-processed C60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Jeong

Yun

Jang

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

High performance inkjet-printed C60 fullerene thin-film transistors: Toward a low-cost and reproducible solution process

Kang

Kitamura

Arakawa

2013

Organic Electronics

View full text Add to dashboard Cite

Polaron Structure and Transport in Fullerene Materials: Insights from First-Principles Calculations

et al. 2014

View full text Add to dashboard Cite

Organic semiconductors offer a low-cost alternative to inorganic semiconductors. However, their usefulness is limited by a relatively low mobility of polaron charge carriers. Past research indicates a positive correlation between charge density and charge mobility in organic semiconductors. This relationship is usually attributed to the phenomenon of excess charges filling traps. Here, we explore whether charge density may also affect mobility via influence on intermolecular couplings. Density functional theory (DFT) with a long-range corrected (LC-BLYP) functional is used to calculate charge densities and electronic couplings of negative charges on C70 fullerenes in the presence of nearby negative point charges, which provides an upper limit calculation of the influence of nearby polarons. We find that in C70 systems with relatively low couplings, the presence of additional charges has an effect of maximizing intermolecular couplings and hence transport. This effect drops off quickly with distance, suggesting that it is relevant only at extremely high charge densities that are an unlikely event in current C70 devices. The effect of charge density on couplings may be useful in understanding transport in very limited regions of C70 materials where the local charge density is high; however, it is unlikely to affect overall device performance.

show abstract

Solvent Dependence of Vacuum-Dried C₆₀Thin-Film Transistors

Cited by 6 publications

References 20 publications

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

High performance inkjet-printed C60 fullerene thin-film transistors: Toward a low-cost and reproducible solution process

Polaron Structure and Transport in Fullerene Materials: Insights from First-Principles Calculations

Contact Info

Product

Resources

About

Solvent Dependence of Vacuum-Dried C60Thin-Film Transistors

Cited by 6 publications

References 20 publications

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

High performance inkjet-printed C60 fullerene thin-film transistors: Toward a low-cost and reproducible solution process

Polaron Structure and Transport in Fullerene Materials: Insights from First-Principles Calculations

Contact Info

Product

Resources

About

Solvent Dependence of Vacuum-Dried C₆₀Thin-Film Transistors