Solution processing of transparent conducting epitaxial La:BaSnO3 films with improved electrical mobility

Abstract

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Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn1–xSbxO3−δ Thin Films by Chemical Solution Deposition

“…It is seen that the highest carrier mobility with the magnitude of 3.3 cm 2 /(V s) is obtained for the BaSn 0.97 Sb 0.03 O 3−δ thin film. Such value is close to the previous results about Sb-doped BSO thin films by PLD 31 but much smaller than that of the La-doped BSO thin films by CSD 26 as we reported earlier. As compared with the thin films of La-doped BSO (La for Ba sites), the substitution of Sb for Sn will lead to more scattering centers since the main conduction paths in BSO are related to the SnO 6 octahedral networks.…”

“…32,33 Previously, we reported that high performance La-doped BaSnO 3 thin films can be successfully prepared by the CSD, and the electronic mobility can be obviously enhanced by introduction of oxygen vacancies. 26 Here, we report successful growth of BSO and Sb-doped BSO thin films by the CSD method. Detailed thin film growth, microstructures, optical and electrical properties, and carrier scattering mechanisms are systematically investigated.…”

Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd

“…In early studies, La dopants had been incorporated into BaSnO 3 crystals of high quality, but high mobilities had not been achieved [31,[34][35][36][37][38][39][40][41][42]. The newest wave of studies also shows a large variation in properties with the same nominal stoichiometries across different groups, and sometimes even within the same group [7][8][9]33,[43][44][45][46][47][48][49][50][51][52]. We have found that microstructure alone is not always a good indicator of carrier mobilities in PLD-grown films [10,11,47,53].…”

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

“…Until 2015, most film growth for the BaSnO 3 system had been limited to PLD (60,75,(83)(84)(85)(87)(88)(89)(90)(91)(92), sputtering (93), and solution deposition (94), resulting in relatively low μ, as summarized in Sn as a precursor. It is noteworthy that this is the highest-known μ in doped BaSnO 3 films.…”

“…To achieve 2DEGs at the interfaces of BaSnO3-related heterostructures, defect-free BaSnO3 films should be a prerequisite so that film growth in a layer-by-layer mode becomes necessary. Until 2015, most film growth for the BaSnO3 system had been limited to PLD (61, 77-81, 101, 118-121), sputtering (122), and solution deposition (123), resulting in relatively low μ, as summarized in Figure 5. The μ values of BLSO films deposited by those growth methods are between 10 and 102 cm 2 V −1 s −1 at n ranging from 5 × 10 19 to 8 × 10 20 cm 3 .…”