Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors

Effects of Thermal Pressing on ZnO Nanoparticle Layers Deposited by Drop Casting

“…Therefore, many efforts have been made to incorporate ZnO NP layers into TFTs. [1][2][3][4][5][6][7] Generally, NP layers have been generated mainly by annealing and plasma treatments to control surface chemistry and crystallinity. However, few reports have addressed the degree of adhesion and mutual binding between individual NPs.…”

Growth and complex characterization of nanoporous oxide layers on metallic tin during one-step anodic oxidation in oxalic acid at room temperature

“…A variety of methods have been already used for the fabrication of nanostructured semiconductor oxides including thermal evaporation [6,7], template assisted methods [8], solution-based synthesis [9], electrospinning [10] and others. On the other hand, it is well known that simple anodic oxidation (anodization) can be successfully adopted for the fabrication of nanostructured oxide layers on the surface of various metals, such as: Al, Ti, Nb, Hf, W, V, Zr, Cr, Fe, Ni, Zn [11][12][13][14] or even Au [15,16].…”

Low‐Temperature Solution‐Processed Memory Transistors Based on Zinc Oxide Nanoparticles

“…The on/off current ratio is 10 , calculated using equation 1, is comparable to or slightly smaller than the mobility previously reported for ZnO-NP transistors, even though the films in these previous reports were processed at higher temperatures (between 230 and 600 8C). [17,19,29] Due to the large gate-source voltages, the gate current through the PVP gate dielectric is quite large, so that the ratio between drain current and gate current is no greater than 10.…”