Low‐Temperature Solution‐Processed Memory Transistors Based on Zinc Oxide Nanoparticles

Abstract

On the way towards wide-spread flexible large-area electronics, several features are of particular interest. With focus on low-cost applications, the manufacturing requires high throughput, preferably realized by simple methods on large-area flexible substrates, for example spin coating, [1,2] inkjet-printing [3][4][5] or roll-to-roll techniques.[6] In view of mobile applications with low power consumption, complementary logic circuit designs are beneficial; these require p-channel and n-channel field-effect transistors with large, balanced mobilities and good air stability. For low-temperature-processed p-channel transistors with mobility greater than 1 cm 2

Defect‐Related Emissions and Magnetization Properties of ZnO Nanorods

“…The excitonic binding energy of ZnO is larger than that of ZnSe (22 meV) and GaN (25 meV), which makes ZnO one of the most promising functional oxide materials for various technological applications at room temperature (RT). [1,[3][4][5] ZnO has also been studied extensively due to the roomtemperature ferromagnetic behavior observed in the pristine semiconductor in the absence of any magnetic ions. [6][7][8][9][10] RT ferromagnetic oxides such as ZnO, Al 2 O 3 , HfO 2 , and TiO 2 may play an important role in future spintronic devices for the manipulation of both charges as well as spins.…”

Indirect optical transition due to surface band bending in ZnO nanotubes

“…1 It is obvious that 1D nanostructures of ZnO with a wide band gap ͑E g = 3.37 eV͒ and a large exciton binding energy ͑60 meV͒ have become important nanomaterials owing to their special properties and potential applications in nanoscale electric and optoelectronic devices. [1][2][3][4][5][6][7] During the past decade, different 1D ZnO nanostructures such as nanotubes, [8][9][10][11][12][13][14][15] nanowires, 1 nanorods, 16 nanobelts, 17,18 tetrapods, 19 and nanoribbons 20 have been successfully fabricated by different methods. Among these 1D structures, the tubular structures of ZnO become particularly important since numerous applications, such as dye-sensitized photovoltaic cells 21 and bio/ gas sensors, 22,23 are required their high porosity and large surface area to fulfill the demand for high efficiency and activity.…”

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

“…It maintains an attractive cost base and has almost no influence on the transistor integration process. After the nanoparticle deposition, an annealing process removes the solvent [34][35][36].…”