Solution-processed tin oxide thin film for normally-off hydrogen terminated diamond field effect transistor

He, Shi; Chen, Genqiang; Han, Xinxin; Wang, Wei; Chang, Xiaohui; Li, Qi; Zhang, Qianwen; Wang, Yanfeng; Wang, Hongxing; Zhu, Tianfei

doi:10.1063/5.0085935

Cited by 8 publications

(3 citation statements)

References 36 publications

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“…Diamond is a unique material with a number of record-breaking properties. Its electrical breakdown threshold is up to 2-10 MV/cm [1][2][3], making it attractive for highvoltage applications, such as field electron transistors [4][5][6][7][8], switching diodes [9][10][11][12][13], highenergy particle trapping [14][15][16][17][18], photoconductive antennas [19][20][21][22] and others. The thermal conductivity of diamond (24 W/cm•K) [23] is even higher than that of copper, which allows it to effectively dissipate heat [24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

Komlenok,

Kononenko,

Bolshakov

et al. 2023

Photonics

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Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of graphitized wires and the breakdown fields between them before and after diamond growth was carried out. The proposed technique is crucial for diamond-based high-field electro-optical devices, such as THz photoconductive emitters.

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Section: Introductionmentioning

confidence: 99%

CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

Komlenok,

Kononenko,

Bolshakov

et al. 2023

Photonics

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“…Up to now, our group has realized normally-off H-diamond MOSFETs with low work function materials (LaB 6 ) [ 18 ], metal/insulator/metal/semiconductor structures [ 19 ], solution-processed SnO 2 [ 20 ], and oxidation of Al and Ti [ 21 , 22 ]. We discovered that oxidation of low work function metal is an effective and simple method to achieve the normal-off operation.…”

Section: Introductionmentioning

confidence: 99%

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Wang

Chen

et al. 2022

Materials

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SnOx films were deposited on a hydrogen-terminated diamond by thermal oxidation of Sn. The X-ray photoelectron spectroscopy result implies partial oxidation of Sn film on the diamond surface. The leakage current and capacitance–voltage properties of Al/SnOx/H-diamond metal-oxide-semiconductor diodes were investigated. The maximum leakage current density value at −8.0 V is 1.6 × 10−4 A/cm2, and the maximum capacitance value is measured to be 0.207 μF/cm2. According to the C–V results, trapped charge density and fixed charge density are determined to be 2.39 × 1012 and 4.5 × 1011 cm−2, respectively. Finally, an enhancement-mode H-diamond field effect transistor was obtained with a VTH of −0.5 V. Its IDMAX is −21.9 mA/mm when VGS is −5, VDS is −10 V. The effective mobility and transconductance are 92.5 cm2V−1 s−1 and 5.6 mS/mm, respectively. We suspect that the normally-off characteristic is caused by unoxidized Sn, whose outermost electron could deplete the hole in the channel.

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“…The black plot in Figure d depicts relationship between P ch and V G . The maximum P ch of 1.53 × 10 13 cm –2 was obtained at V G = −4 V. The channel transport characteristics were also extracted from the following expression: I normalD = 1 2 μ normaln C OX W normalG L normalG false( V normalG − V th false) 2 where I D is the saturation maximum drain current, C OX is the capacitance, and μ n is the field-effect mobility. For this device, W G , L G , and V th were constants, and the values were 48 μm, 5 μm, and 0.4 V, respectively.…”

mentioning

confidence: 99%

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

et al. 2023

J. Phys. Chem. Lett.

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This paper presents a fabricated solar-blind phototransistor based on hydrogen-terminated diamond. The phototransistor shows a large photocurrent and enhancement of responsivity over conventional two-terminal diamond-based photodetector. These enhancement effects are owing to the internal gain of the phototransistor. The fabricated phototransistor exhibits a high photoresponsivity (R) of 2.16 × 10 4 A/W and a detectivity (D*) of 9.63 × 10 11 jones, with gate voltage (V G ) and drain voltage of approximately −1.5 V and −5 V, respectively, under 213 nm light illumination. Even at ultralow operating voltage of −0.01 V, the device records satisfactory performance with R and D* of 146.7 A/W and 6.19 × 10 10 jones, respectively. By adjusting the V G , photocurrent generation in the device can be continuously tuned from the fast photoconductive effect to the optical gating effect with high optical gain. When V G increases from 1.4 to 2.4 V, the decay time decreases from 1512.0 to 25.5 ms. Therefore, responsivity, dark current, I photo /I dark , and decay time of the device can be well tuned by V G .

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Solution-processed tin oxide thin film for normally-off hydrogen terminated diamond field effect transistor

Cited by 8 publications

References 36 publications

CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

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