Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors

Inkjet‐Printed and Deep‐UV‐Annealed YAlOx Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

“…We explain this discrepancy by the fact that the solution‐processed oxide layers obtained at low temperature are not completely free of impurities, such as hydroxides and carbonates, and the inclusion of Y into the lattice might passivate some of the leakage paths present in the AlO x layers. A similar behavior was also observed in the YAlO x layers annealed at 400 °C in a recent study, where the main reason for the decrease in the leakage was related to the decrease of the remaining hydroxyl groups in the layer with Y incorporated into the AlO x lattice. Important electrical parameters of the YAlO x dielectrics are also summarized in Table 1 .…”

“…Among these ternary oxides, YAlO x , obtained by combining Y 2 O 3 as the high‐κ oxide (κ > 15) and Al 2 O 3 as the wide band‐gap oxide ( E g ≈ 8 eV), catches the attention due to its superior properties when compared to the binary forming oxides. As recently reported by Lee et al, spin coated YAlO x not only possesses a higher dielectric constant (≈19) than AlO x , but also has a lower leakage current density than both AlO x and YO x dielectrics. The main drawback of that study, however, was the high PDA temperature of 400 °C, which is not compatible with temperature‐sensitive substrates.…”

“…One of the potential approaches to solve this problem is to synthesize ternary oxide alloys, which are formed by combining two dielectrics, one of which provides a high dielectric constant whereas the other one has a high band gap, thereby minimizing the electrical leakage. Several ternary oxides such as AlPO, AlNaO, TaSrO, AlZrO, HfLaO, HfSiO, MgTiO, LaAlO, and yttrium aluminum oxide (YAlO x ) have been investigated, and high‐performance oxide TFTs utilizing these dielectrics have been demonstrated.…”

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

“…[ 26 ] Solution processes have been employed for the generation of ternary oxide dielectrics, including spin coating or spray pyrolysis routes for fabricating SrTa 2 O 6 , [ 27 ] LaAlO 3 , [ 26,28 ] ZrAlO x , [ 29 ] MgTiO, [ 30 ] HfLaO x , [ 31 ] HfSiO x , [ 32 ] AlNaO, [ 33 ] AlPO, [ 34 ] and Y x Al 2− x O 3 . [ 35,36 ]…”

“…[ 42 ] Reports of printed ternary metal‐oxide‐alloy dielectrics are scarce, and a survey of the literature suggests that they are restricted to inkjet deposition of YAlO x , [ 17 ] Sc 1 Zr 1 O x , [ 43 ] and ternary tantalum/aluminum oxide alloys. [ 44,45 ] YAlO x (perhaps better presented as Y x Al 2− x O 3 ) is of particular interest because it exploits Al 2 O 3 as the wide bandgap component (≈8 eV), coupled with Y 2 O 3 as the high‐κ component (ε = 19.8, [ 35 ] 25.4 [ 21 ] ). This combined effect provides a material with κ as high as 19.2, greater than that of Al 2 O 3 (ε = 11.5).…”